Related papers: An Accurate Method for Measuring Activation Energy
Accurate measurements of photonuclear reaction cross sections are crucial for a number of applications, including radiation shielding design, absorbed dose calculations, reactor physics and engineering, nuclear safeguard and inspection,…
In the emergent field of quantum technology, the ability to manage heat at the nanoscale and in cryogenic conditions is crucial for enhancing device performance in terms of noise, coherence, and sensitivity. Here, we demonstrate the active…
A novel interferometric method for absolute beam energy measurement is under development at MAMI. At the moment, the method is tested and optimized at an energy of 195 MeV. Despite the very small statistical uncertainty of the method,…
$^{229}$Th is the only known nucleus with an excited state that offers the possibility for a direct laser excitation using existing laser technology. Its excitation energy has been measured indirectly to be 7.8(5) eV ($\approx$160 nm). The…
The performance of a silicon photomultiplier has been assessed at low temperature in order to evaluate its suitability as a scintillation readout device in liquid argon particle physics detectors. The gain, measured as 2.1E6 for a constant…
In this study, we proposed a temperature model of magnetic nanoparticle relaxation and a phase measurement method under a mixing-frequency excitation field, which can improve the temperature accuracy of magnetic nanothermometry. According…
Charge-transfer-to-solvent (CTTS) reactions of hydroxide induced by 200 nm monophotonic or 337 nm and 389 nm biphotonic excitation of this anion in aqueous solution have been studied by means of pump-probe ultrafast laser spectroscopy.…
The performance of germanium detectors for high-energy $\gamma$-rays was evaluated using a 992-keV resonance in the $^{27}$Al(p, $\gamma$)$^{27}$Si reaction. The measurement was conducted at the RIKEN tandem accelerator. The energy of the…
We have studied the temperature dependencies of the photoluminescence (PL) intensity of 4.1 eV in microcrystalline powder of hexagonal boron nitride in the range of 7-1100 K. The results obtained have been analyzed within the band model of…
Temperature-dependent radiative recombination of free excitons involving one or two LO phonons in GaN is investigated in detail. It is found that both phonon sidebands possess asymmetric lineshape and their energy spacings from the zero…
Ionic conductivity in solid electrolytes is commonly expected to exhibit Arrhenius dependence on temperature, determined by a well-defined activation energy. Consequently, a standard approach involves calculating this energy using…
The intensities of the ten strongest $\gamma$-ray transitions following the $^{111}Sn$ ($T_{1/2}$=35.3 m) decay have been determined via comparison of the two sets of the experimental photonucleon reaction yields driven using the…
We have grown nitrogen-doped ZnO films grown by two kinds of epitaxial methods on lattice-matched ScAlMgO$_4$ substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region.…
Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled…
We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW…
Complex impedance spectroscopy data in the frequency range 16Hz < f < 3 MHz at room temperature were acquired on pure ZnO single crystal and thin film. The measured impedance of the ZnO samples shows large changes with time after exposure…
The temperature dependence of the viscosity of glass is a major concern in the field of glass research. Strong deviations from the Arrhenius law make the interpretation of the activation energy difficult. In the present study, a reasonable…
This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron…
The paper reports a possible application of AgInSe_2 for opto-electronic switching. Material has been studied over a wide range of frequencies (5Hz to 1MHz), through measurements of conductance and capacitance, at different temperatures and…
Although soft X-ray absorption features in AGN were discovered almost ten years ago, the nature and location of the gas creating them has remained controversial. However, by making use of the newly-available high-resolution spectra provided…