Related papers: Dynamic avalanche breakdown of a p-n junction: det…
It has been known that discrete aurora suddenly intensifies and deforms from an arc-like to a variety of wavy/vortex structures, especially during a substorm period. The instability of Alfv$\acute{\rm e}$n waves reflected from the…
Tunneling and over-barrier ionization are the primary processes of strong-field ionization of atoms and molecules. While the dynamics of tunneling ionization have been extensively studied, exploration of over-barrier ionization dynamics has…
We have investigated the cross-over from Zener tunneling of single charge carriers to avalanche type of bunched electron transport in a suspended graphene Corbino disk in the zeroth Landau level. At low bias, we find a tunneling current…
We discuss a new mode of ionization front passage in semiconductor structures. The front of avalanche ionization propagates into an intrinsic semiconductor with a constant electric field $E_{\rm m}$ in presence of a small concentration of…
We investigate the critical current, $I_C$, of ballistic Josephson junctions made of encapsulated graphene/boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device…
The dynamics of positive and negative streamers is numerically simulated in atmospheric pressure air. It is shown that positive and negative streamers behave in radically different ways when decelerating and stopping. When the head…
Every observation of astrophysical objects involving a spectrum requires atomic data for the interpretation of line fluxes, line ratios and ionization state of the emitting plasma. One of the processes which determines it is collisional…
We study by first-principles calculations a densely packed island of organic molecules (F4TCNQ) adsorbed on graphene. We find that with electron doping the island naturally forms a p-n junction in the graphene sheet. For example, a doping…
The primary X-ray diagnostic lines in He-like ions are mainly excited by electron impact from the ground level to the n = 2 levels, but at high temperatures n > 2 levels are also excited. In order to describe the atomic processes more…
A p-n junction, induced in graphene by gating, works to contrast the edge states of electrons and holes on each side of it. In a magnetic field those edge states carry two species of persistent current, which are intimately tied to the…
If systems change as fast as possible as they pass through a phase transition then the initial domain structure is constrained by causality. We shall show how we can trace these causal horizons by measuring the spontaneous production of…
The ion energy distribution functions (IEDF) have been measured for a helium atmospheric pressure dielectric barrier discharge jet expanding into the air and impacting a metal or ceramic surface. The plasma jet produces ionization waves as…
We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm2 at 10 mV, and 17.7 A/cm2 peak current)…
We have investigated the mechanism at the origin of the infra-red radiation emitted by a biased tunnel junction by detecting photons at frequencies $\nu<eV/h$. To address this regime, the bias voltage $V$ exceeds one volt and the potential…
We show that the spatio-temporal ElectroHydroDynamic (EHD) force production in surface AC-Dielectric Barrier Discharge (AC-DBD) actuators is strongly influenced by both the streamer regime during the positive phase and the micro-discharge…
We show that electron tunneling from edge states in two-dimensional topological insulator into a parallel electron waveguide leads to the appearance of spin-polarized current in the waveguide. The spin polarization $P$ can be very close to…
We propose a new orbital controlled model to explain the gate field induced switching of current in a semiconducting PbS-nanowire junction. A single particle scattering formalism in conjunction with a posteriori density functional approach…
The phosphorous activation in Ge n$^{+}$/p junctions is compared in terms of junction depth, by using laser spike annealing at 860{\deg}C for 400$\mu$s. The reverse junction leakage is found to strongly depend on the abruptness of dopant…
The electric field within the streamer channel is a critical parameter in the calculation model for the nonlinear breakdown voltage of SF6, motivating the research presented in this paper. By using a 2D fluid model, we investigate the…
We have probed the switching dynamics of the Josephson critical current of a superconducting weak link by measuring its voltage/current characteristics while applying an ac current bias in the range 1-200 MHz. The weak link between two Nb…