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We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN…

Applied Physics · Physics 2024-08-27 Zhanbo Xia , Chandan Joishi , Shahadat H. Sohel , Andy Xie , Edward Beam , Yu Cao , Siddharth Rajan

Ultrafast time-resolved photoluminescence spectroscopy following one- and two-photon excitation of ZnO powder is used to gain unprecedented insight into the surprisingly high external quantum efficiency of its "green" defect emission band.…

Materials Science · Physics 2015-05-13 J. V. Foreman , H. O. Everitt , J. Yang , T. McNicholas , J. Liu

${\beta}$-Ga${_2}$O${_3}$ based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these…

Systems and Control · Electrical Eng. & Systems 2022-04-04 Shahadat H. Sohel , Ramchandra Kotecha , Imran S Khan , Karen N. Heinselman , Sreekant Narumanchi , M Brooks Tellekamp , Andriy Zakutayev

The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior.…

Materials Science · Physics 2016-09-01 Aurelien David , Christophe A. Hurni , Nathan G. Young , Michael D. Craven

We report on the electronic and optical properties of two theoretically predicted stable spinel compounds of the form ZnB2O4, where B = Ni or Cu; neither compound has been previously synthesized, so we compare them to the previously studied…

Materials Science · Physics 2015-04-28 Maria Stoica , Cynthia S. Lo

Atomically transparent vertically aligned ZnO-based van der Waals material have been developed by surface passivation and encapsulation with atomic layers of MgO using materials by design; the physical properties investigated. The…

Materials Science · Physics 2019-06-21 C. E. Ekuma , S. Najmaei , M. Dubey

First-principles density-functional calculations have been performed for zinc monochalcogenides with zinc-blende- and wurtzite-type structures. It is shown that the local-density approximation underestimates the band gap, misplaces the…

Materials Science · Physics 2009-11-11 S. Zh. Karazhanov , P. Ravindran , U. Grossner , A. Kjekhus , H. Fjellvag , B. G. Svensson

This work explores the Zn vacancy in ZnO using hybrid density functional theory calculations. The Zn vacancy is predicted to be an exceedingly deep polaronic acceptor that can bind a localized hole on each of the four nearest-neighbor O…

Materials Science · Physics 2017-05-26 Y. K. Frodason , K. M. Johansen , T. S. Bjørheim , B. G. Svensson , A. Alkauskas

Metal nanoparticle (NP) surface coatings are known to significantly enhance the ultra-violet luminescence intensity of ZnO. Although there is general agreement that resonantly excited Localized Surface Plasmons (LSPs) in metal NPs can…

We present an electrically driven plasmonic device consisting of a gold nanoparticle trapped in a gap between two electrodes. The tunneling current in the device generates plasmons, which decay radiatively. The emitted spectrum extends up…

Mesoscale and Nanoscale Physics · Physics 2016-01-21 Yuval Vardi , Eyal Cohen-Hoshen , Guy Shalem , Israel Bar-Joseph

The evolution of charge carriers in photoexcited room temperature ZnO nanoparticles in solution is investigated using ultrafast ultraviolet photoluminescence spectroscopy, ultrafast Zn K-edge absorption spectroscopy and ab-initio molecular…

We report a systematic study on 1.2 MeV Ar^8+ irradiated ZnO by x-ray diffraction (XRD), room temperature photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption measurements. ZnO retains its wurtzite crystal structure up to…

Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A…

Materials Science · Physics 2009-11-10 S. Dhara , A. Datta , C. T. Wu , Z. H. Lan , K. H. Chen , Y. L. Wang , C. W. Hsu , L. C. Chen , H. M. Lin , C. C. Chen , Y. F. Chen

Based on measurements of angle resolved photoemission, we report that in the Pb/Ge(111)- \sqrt{3}x\sqrt{3} R30^\circ structure, in addition to three bands resembling Ge heavy hole (HH), light hole (LH), and split off (SO) bulk band edges, a…

Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been investigated by charge-based deep level transient spectroscopy (Q-DLTS), photoluminescence and cathodoluminescence microanalysis. The as-grown…

Single photon sources are required for a wide range of applications in quantum information science, quantum cryptography and quantum communications. However, so far majority of room temperature emitters are only excited optically, which…

Recent \textit{ab initio} calculations predict 1D dispersive electronic bands confined to the atomic scale cores of dislocations in the wide bandgap (3.84 eV) semiconductor ZnS. We test these predictions by correlating sub-bandgap optical…

NiO/ZnO-based thin films, including single-layer and heterostructure configurations, were synthesized to investigate the influence of stacking order on their electrochemical performance for supercapacitor applications. To improve the…

Blue energy relies on the chemical potential difference generated between solutions of high and low ionic strength and would provide a sun-and-wind independent energy source at estuaries around the world. Converting this osmotic energy…

The kinetics of the charge carrier recombination in dye molecule-doped multilayer organic light-emitting diodes (OLEDs) was quantified by transient electroluminescence (EL). Three sets of dye molecules, such as derivatives of naphthalimide…

Materials Science · Physics 2014-11-13 Shengwei Shi , Feng Gao , Zhengyi Sun , Yiqiang Zhan , Mats Fahlman , Dongge Ma