Related papers: Blue light-emitting diode based on ZnO
In the experimental electroluminescence (EL) spectra of light-emitting diodes (LEDs) based on N-polar (In,Ga)N/GaN nanowires (NWs), we observed a double peak structure. The relative intensity of the two peaks evolves in a peculiar way with…
In this letter, we study how coupling between AuNPs and ZnO thin films affects their emission properties. The emission intensity of ZnO thin films changes when Al2O3 spacer layer of different thickness are included in ZnO/Au films,…
We investigate a semiconductor $p$-$n$ junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the…
Perovskite nanoplatelets (NPls) hold great promise for light-emitting applications, having achieved high photoluminescence quantum efficiencies (PLQEs) approaching unity in the blue wavelength range, where other metal-halide perovskites…
Electronic structures of Zn$_{1-x}$Co$_x$O have been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Co 3d states are found to lie near the top of the O $2p$ valence band, with a peak around…
In the present work we study the effect of nitrogen (N) and fluorine (F) doping in the electronic properties of ZrO$_2$ by using \emph{ab initio} electronic structure calculations. Our calculations show the importance of on-site Coulomb…
Effect of ambient gases on photoluminescence (PL) and electrical conductivity of films prepared using ZnO nanoparticles (NPs) have been investigated. It is observed that NPs of size below 20 nm kept inside a chamber exhibit complete…
Solution-processed light-emitting diodes (LEDs) are appealing for their potential in the low-cost fabrication of large-area devices. However, the limited performance of solution-processed blue LEDs, particularly their short operation…
Nonlinear photoluminescence (N-PL) is a broadband photon emission arising from non-equilibrium electron distribution generated at the surface of metallic nanostructures by an ultrafast pulsed laser illumination. N-PL is sensitive to surface…
In this paper, narrowband emitters have been designed using particle swarm optimization (PSO) in the 10-20 {\mu}m infrared range. The device structure consists of an anisotropic {\alpha}-MoO3 layer combined with the one- and two-dimensional…
We present a diffusion-based simulation and theoretical models for explanation of photoluminescence (PL) emission intensity in semiconductor nanoplatelets. It is shown that the shape of PL intensity curves can be reproduced by the interplay…
Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The…
In a recent letter [Phys. Rev. Lett. 110, 177406 (2013)], presenting a spectroscopic study of the electrons emitted from the GaN p-cap of a forward-biased InGaN/GaN light-emitting diode (LED), the authors observed at least two distinct…
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis,…
We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to…
The electrochemical deposition of ZnO hierarchical nanostructures directly from PHEMA hydrogel coated electrodes has been successfully demonstrated. A variety of hierarchical ZnO nanostructures, including porous nanoflakes, nanosheets and…
The UV enhancement of Al-coated ZnO single crystals with a wide range of carrier densities is systematically studied using depth-resolved cathodoluminescence (CL) and photoluminescence (PL) as well as valence band X-ray photoemission…
Extensively studied Mn-doped semiconductor nanocrystals have invariably exhibited photoluminescence (PL) over a narrow energy window of width <= 149 meV in the orange-red region and a surprisingly large spectral width (>= 180 meV), contrary…
White light-emitting diodes are gaining popularity and are set to become the most common light source in the U.S. by 2025. However, their performance is still limited by the lack of an efficient red-emitting component with a narrow band…
We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output…