Related papers: Optical Gain from InAs Nanocrystal Quantum Dots in…
A systematic manipulation of the morphology and the optical emission properties of MOVPE grown ensembles of InAs/InP quantum dots is demonstrated by changing the growth kinetics parameters. Under non-equilibrium conditions of a…
Despite tremendous advances in the fundamentals and applications of cavity quantum electrodynamics (CQED), investigations in this field have primarily been limited to optical cavities composed of purely dielectric materials. Here, we…
Accessing fluid infiltration in nanogranular coatings is an outstanding challenge, of relevance for applications ranging from nanomedicine to catalysis. A sensing platform, allowing to quantify the amount of fluid infiltrated in a…
We present experimental evidence of Sb incorporation inside InAs/GaA(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional…
Silicon has long been the foundational semiconductor material for a broad range of electronic devices, owing to its numerous advantages: wide natural availability, ease of synthesis in both crystalline and amorphous forms, and relatively…
The development of nanoscale nonlinear elements in photonic integrated circuits is hindered by the physical limits to the nonlinear optical response of dielectrics, which requires that the interacting waves propagate in transparent volumes…
Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy,…
The investigation of small size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN Quantum Dots (QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are…
Solvothermal synthesis of MoS2 based quantum dots (QDs) and the performance evaluation of bare QDs for the detection of aqueous As (III) oxidative state at room temperature and neutral pH over an extremely wide range (0.1 ppb to 1000 ppb)…
We present the design, fabrication and characterization of high-\emph{Q} (\emph{Q}=36,000) polymeric photonic crystal nanobeam cavities made of two polymers that have an ultra-low index contrast (ratio=1.15) and observed thermo-optical…
This work presents a foundational approach for fabricating arrays of self-aligned micro- and nanopillar structures incorporating individual site-controlled quantum dots (QDs) for enhanced light extraction. This method leverages the…
A model for realistic InAs quantum dot composition profile is proposed and analyzed, consisting of a double region scheme with an In-rich internal core and an In-poor external shell, in order to mimic the atomic scale phenomena such as…
We have investigated the band-gap pressure coefficients of self-assembled InAs/GaAs quantum dots by calculating 17 systems with different quantum dot shape, size, and alloying profile using atomistic empirical pseudopotential method within…
The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a…
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is…
We present a comprehensive study of the optical properties of InAs/InP self-assembled quantum dots (QDs) using an empirical pseudopotential method and configuration interaction treatment of the many-particle effects. The results are…
Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length…
Monolithic integration of III-V optoelectronic devices with materials for various functionalities inexpensively is always desirable. Polysilicon (poly-Si) is an ideal platform because it is dopable and semi-conducting and can be deposited…
We study optical gain in a gas of cold 39K atoms. The gain is observed during operation of a conventional magneto-optical trap without the need for additional fields. Measurements of transmission spectra from a weak probe show that the gain…
Integration of photon pairs nanosources is a major challenge for quantum technology. In this context, we develop a formalism for the investigation of Spontaneous Parametric Down Conversion in hybrid structures that combine plasmonic…