Related papers: Origin of Low-Frequency Negative Transconductance …

A technically simple and physically clear method is suggested for the direct measurement of brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method…

A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors (HEMT), which have a large…

We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and…

$\mathrm{\beta}$-Gallium oxide ($\mathrm{\beta\mbox{-}Ga_{2}O_{3}}$) is an emerging widebandgap semiconductor for potential application in power and RF electronics applications. Initial theoretical calculation on a 2-dimensional electron…

Despite the concerted effort of several research groups, a detailed experimental account of defect dynamics in high-quality single- and few-layer transition metal dichalcogenides remain elusive. In this paper we report an experimental study…

We review the contribution of infrared spectroscopy to the study of the pseudogap in high temperature superconductors. The pseudogap appears as a depression of the frequency dependent conductivity in the c-axis direction and seems to be…

In highly doped uncompensated p-type layers within the central part of GaAs/AlGaAs quantum wells at low temperatures we observed an activated behavior of the conductivity with low activation energies (1-3) meV which can not be ascribed to…

In this letter, we report on the theoretical investigations of electron mobility in practically viable designs of InxGa1-xN channel high electron mobility transistors (HEMT). Carriers in such devices are expected to exhibit a higher…

The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We observed that an InP HEMT 0.3-14GHz LNA at 2K,…

The characterization of deep levels in AlGaN/GaN heterostructures is one of the most important problems in GaN high electron mobility transistors (HEMTs) technology. This work reports on a technique for determination of deep level…

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation…

The DC thermoelectric conductivities of holographic systems in which translational symmetry is broken can be efficiently computed in terms of the near-horizon data of the dual black hole. By calculating the frequency dependent…

We study the effect of fluctuations on the {\bf ac} conductivity of a layered superconductor both for $c$-axis and $ab$-plane electromagnetic wave polarizations. The fluctuation contributions of different physical nature and signs…

The high-frequency conductivity of Si delta-doped GaAs/AlGaAs heterostructures is studied in the integer quantum Hall effect (QHE) regime, using acoustic methods. Both the real and the imaginary parts of the complex conductivity are…

We have measured the surface acoustic wave velocity shift in a GaAs/AlGaAs heterostructure containing a two-dimensional electron system (2DES) in a low-density regime ($<$ $10^{10}$ cm$^{-2}$) at zero magnetic field. The interaction of the…

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport…

Full investigation of deep defect states and impurities in wide-bandgap materials by employing commercial transient capacitance spectroscopy is a challenge, demanding very high temperatures. Therefore, a high-temperature deep-level…

Two-level system (TLS) defects in dielectrics cause decoherence in superconducting circuits, yet their origin, frequency distribution, and dipole moments remain poorly understood. Current probes, primarily based on qubits or resonators,…

By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven…

How ordered phases melt in low-dimensional quantum materials remain difficult to resolve because the relevant fluctuations are dynamic and charge neutral. In this work, we show that thermal transport provides a sensitive probe of these…