This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation to technology offers a comprehensive understanding of the device behavior. Validation is achieved through measured transfer characteristics of GaN HEMTs fabricated at IMEC on a broad range of biases. This simplified approach should enable a simple and effective circuit design methodology with AlGaN/GaN HEMT heterostructures.
@article{arxiv.2409.03589,
title = {Simplified EPFL GaN HEMT Model},
author = {Farzan Jazaeri and Majid Shalchian and Ashkhen Yesayan and Amin Rassekh and Anurag Mangla and Bertrand Parvais and Jean-Michel Sallese},
journal= {arXiv preprint arXiv:2409.03589},
year = {2024}
}