Related papers: Electric field switching in a resonant tunneling d…
Embedding a double barrier resonant tunnelling diode (RTD) in an unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD…
To translate electrical into optical signals one uses the modulation of either the refractive index or the absorbance of a material by an electric field. Contemporary electroabsorption modulators (EAMs) employ the quantum confined Stark…
We report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases the electric…
We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output…
A $\Lambda$-system in $D_2$ line transition of the $^{87}Rb$ atom has been investigated for quantum interference effects for different configurations of coupling field. With a travelling wave coupling field (co-propagating with probe…
We report high speed optical modulation in a resonant tunneling relaxation oscillator consisting of a resonant tunneling diode (RTD) integrated with a unipolar optical waveguide and incorporated in a package with a coplanar waveguide…
The scaling of active photonic devices to deep-submicron length-scales has been hampered by the fundamental diffraction limit and the absence of materials with sufficiently strong electro-optic effects. Here, we demonstrate a solid state…
The ability to modulate an optical field via an electric field is regarded as a key function of electro-optic interconnects, which are used in optical communications and information processing systems. One of the main required devices for…
The electromagnetically induced transparency (EIT) phenomenon has been investigated in a $\Lambda$-system of the $^{87}$Rb D$_1$ line in an external transverse magnetic field. Two spectroscopic cells having strongly different values of the…
Electrochemically mediated selective adsorption is an emerging electrosorption technique that utilizes Faradaically enhanced redox active electrodes, which can adsorb ions not only electrostatically, but also electrochemically. The superb…
We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in…
The paper presents the results of a study of electron-beam modification (EBM) of VO2-switch I-V curve threshold parameters and the self-oscillation frequency of a circuit containing such a switching device. EBM in vacuum is reversible and…
We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on…
One of the technical barriers impeding the wide applications of integrated photonic circuits is the lack of ultracompact, high speed, broadband electro-optical (EO) modulators, which up-convert electronic signals into high bit-rate photonic…
Manipulation of the spin-states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin-filters, spin-transistors and single-spin memory as…
The Dynamical Franz-Keldysh Effect is exposed by exploring near-bandgap absorption in the presence of intense THz electric fields. It bridges the gap between the DC Franz- Keldysh effect and multi-photon absorption and competes with the THz…
In (100)-oriented GaAs illuminated at normal incidence by a laser and its second harmonic, interference between one- and two-photon absorption results in ballistic current injection, but not modulation of the overall carrier injection rate.…
This work aims to design a CMOS compatible, low-electrical power consumption modulator assisted by plasmons. For compactness and reduction of the electrical power consumption, electro-absorption based on the Franz-Keldysh effect in…