Related papers: Raman scattering in osmium under pressure
We report the observation of an intense anomalous peak at 1608 cm$^{-1}$ in the Raman spectrum of graphene associated to the presence of chromium nanoparticles in contact with graphene. Bombardment with an electron beam demonstrates that…
In ionic Raman scattering, infrared-active phonons mediate a scattering process that results in the creation or destruction of a Raman-active phonon. This mechanism relies on nonlinear interactions between phonons and has in recent years…
Raman spectra of rhombohedral boron monosulfide (r-BS) were measured under pressures up to 34 GPa at room temperature. No pressure-induced structural phase transition was observed, while strong pressure shift of Raman bands towards higher…
Pressure-dependent Raman scattering studies in the range 0.0 -- 32 kbar were carried out in L-alanine in order to investigate its external mode phonon spectra in relation to the phase transitions in the crystal. A careful analysis of the…
The temperature and pressure dependence of the partial density of phonon states of iron atoms in superconducting Fe1.01Se was studied by 57Fe nuclear inelastic scattering (NIS). The high energy resolution allows for a detailed observation…
The infrared reflectance of the transition metal chalcogenide 1T-TaS2 has been measured at temperatures from 30K to 360K over 30-45,000cm^-1 (4meV-5.5eV). The optical conductivity was obtained by Kramers-Kronig analysis. At 360K only modest…
We investigate phonon lifetimes in VO2 single crystals. We do so in the metallic state above the metal-insulator transition (MIT), where strong structural fluctuations are known to take place. By combining inelastic X-ray scattering and…
We have observed a strongly broadened Raman band of MgB2 that shows anomalously large pressure dependence of its frequency. This band and its pressure dependence can be interpreted as the E2g zone center phonon, which is strongly anharmonic…
We report high pressure X-ray diffraction and a detailed systematic Raman measurements on $ReS_2$ sample, which is mechanically exfoliated from a single crystal. A few new Bragg peaks are observed to emerge above 6 GPa indicating a…
The vibrational and electronic properties of 2-dimensinal (2D) materials can be efficiently tuned by external strain due to their good stretchability. Resonant Raman spectroscopy is a versatile tool to study the physics of phonons,…
Lead sulfide is an important semiconductor that has found technological applications for over a century. Raman spectroscopy, a standard tool for the investigation and characterization of semiconductors, has limited application to this…
We show that the electron-phonon coupling in graphene, in contrast with the non-relativistic two-dimensional electron gas, leads to shifts in the phonon frequencies that are non-trivial functions of the electronic density. These shifts can…
The out-of-plane fluctuations of carbon atoms in a graphene sheet have been studied by means of classical molecular dynamic simulations with an empirical force-field as a function of temperature. The Fourier analysis of the out-of-plane…
Raman scattering experiments have been carried out on single crystals of Nd$_{0.5}$Sr$_{0.5}$MnO$_3$ as a function of temperature in the range of 320-50 K, covering the paramagnetic insulator-ferromagnetc metal transition at 250 K and the…
We present a systematic study of the structure and lattice dynamics at room temperature, and the phonon behavior at low temperatures in orthorhombic Gd$_{1-x}$Y$_{x}$MnO$_{3}$ manganites, with 0 $\leq$ x $\leq$ 0.4, using powder x-ray…
We have observed the characteristic temperature dependence of the intermolecular phonon spectrum in the organic dimer Mott insulator kappa-(ET)2Cu2(CN)3 exhibiting a dielectric anomaly at 30 K. The anomalous spectral narrowing of the 55…
Using infrared (IR) and Raman spectroscopies combined with high-resolution x-ray diffraction, we address several controversial aspects of altermagnetic $\alpha$-MnTe. We show that mechanical stress applied to crystals of this material…
Magneto Raman scattering study of the E$_{2g}$ optical phonons in multi-layer epitaxial graphene grown on a carbon face of SiC are presented. At 4.2K in magnetic field up to 33 T, we observe a series of well pronounced avoided crossings…
We examine the intrinsic energy dissipation steps in electrically biased graphene channels. By combining in-situ measurements of the spontaneous optical emission with a Raman spectroscopy study of the graphene sample under conditions of…
The scattering of lattice excitations (phonons) with the photoexcited charge carriers is of a major concern in optoelectronic devices. Here, the resonant Raman scattering will be utilized to study an exciton-phonon interaction in GaN…