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Nearly 30% increase of the ferromagnetic phase transition temperature has been achieved in strained MnAs nanocrystals embedded in a wurtzite GaAs matrix. Wurtzite GaAs exerts tensile stress on hexagonal MnAs nanocrystals, preventing a…
We report on the magnetic and magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As modified by Ga$^{+}$ ion irradiation using focused ion beam. A marked reduction in the conductivity and the Curie temperature is induced…
Although ferromagnetism is in general a long-range collective phenomenon, it is possible to induce local spatial variations of magnetic properties in ferromagnetic materials. For example, systematic variation of the exchange coupling…
We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (T_B = 48 +- 2 K)…
Magnetic two-dimensional materials have potential application in next-generation electronic devices and have stimulated extensive interest in condensed matter physics and material fields. However, how to realize high-temperature…
Multiferroic heterostructures have gained in recent years a renewed role in spintronic applications due to their possibility in controlling the magnetic properties via interfacial coupling by exploiting the ferroelectric response to various…
Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However,…
We have studied magnetic properties of heavily Mn-doped [(In0.44Ga0.56)0.79Mn0.21]As thin films grown by low-temperature molecular-beam epitaxy (LT-MBE) on InP substrates. The (InGaMn)As with high Mn content (21%) was obtained by decreasing…
Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin…
We present a theoretical survey of ferromagnetic transition temperatures in cubic (III,Mn)V semiconductors based on a model with $S=5/2$ local moments exchange-coupled to itinerant holes in the host semiconductor valence band. Starting from…
The Ga vacancy mediated microstructure evolution of (Ga,Mn)As during growth and post-growth annealing is studied using a multi-scale approach. The migration barriers for the Ga vacancies and substitutional Mn together with their…
Chemical pressure is an effective method to tune physical properties, particularly for diluted magnetic semiconductors (DMS) of which ferromagnetic ordering is mediated by charge carriers. Via substitution of smaller Ca for larger Sr, we…
Severe plastic deformation using high-pressure torsion of ternary Cu-based materials (CuFeCo and CuFeNi) was used to fabricate bulk samples with a nanocrystalline microstructure. The goal was to produce materials featuring the granular…
The magnetic properties of the diluted magnetic semiconductors (DMS) (Ga, Mn)As and (Ga, Mn)N are investigated by means of an effective Heisenberg model, whose exchange parameters are obtained from first-principle calculations. The…
The properties of functional oxide heterostructures are strongly influenced by the physics governing their interfaces. Modern deposition techniques allow us to accurately engineer the interface physics through the growth of atomically…
We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K…
We report the parameter-free, density functional theory calculations of interatomic exchange interactions and Curie temperatures of half-metallic ferrimagnetic full Heusler alloys Mn2VZ (Z=Al, Ge). To calculate the interatomic exchange…
A density functional theory of ferromagnetism in heterostructures of compound semiconductors doped with magnetic impurities is presented. The variable functions in the density functional theory are the charge and spin densities of the…
We demonstrate electrical control of ferromagnetism in field-effect transistors with a trilayer quantum well (QW) channel containing an ultrathin n-type ferromagnetic semiconductor (In,Fe)As layer. A gate voltage is applied to control the…
Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the…