Related papers: Charge qubits in semiconductor quantum computer ar…
We analyze theoretically the decoherence of two interacting electrons in a double self-assembled quantum dot due to a random telegraph noise. For this purpose we have examined the pure dephasing rate by evaluating the decoherence factor.…
Rapid progress in semiconductor spin qubits has enabled experimental demonstrations of a two-qubit logic gate. Understanding spin decoherence in a two-qubit logic gate is necessary for optimal qubit operation. We study spin decoherence due…
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron…
A quantum computer that can be constructed based on a superconducting nanocircuits has previously been proposed. We examine the effect of background charge fluctuations on a coupled Josephson charge qubit system used in such a computer. In…
In circuit-based quantum computing, the available gate set typically consists of single-qubit gates acting on each individual qubit and at least one entangling gate between pairs of qubits. In certain physical architectures, however, some…
Charge qubits can be created and manipulated in solid-state double-quantum-dot (DQD) platforms. Typically, these systems are strongly affected by quantum noise stemming from coupling to substrate phonons. This is usually assumed to lead to…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…
The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still…
The valley splitting of 2D electrons in doubly-gated silicon-on-insulator quantum wells is studied by low temperature transport measurements under magnetic fields. At the buried thermal-oxide SiO$_{2}$ interface, the valley splitting…
With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We…
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons…
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon…
We examine energy spectra of Si quantum dots embedded into Si_{0.75}Ge_{0.25} buffers using atomistic numerical calculations for dimensions relevant to qubit implementations. The valley degeneracy of the lowest orbital state is lifted and…
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting…
We study theoretically the quantum dynamics of an electron in the singly-ionized double-donor structure in the semiconductor host under the influence of two strongly detuned laser pulses. This structure can be used as a charge qubit where…
In semiconductor-based quantum technologies, the capability to shuttle charges between components is profoundly enabling. We numerically simulated various "conveyor-belt" shuttling scenarios for simple Si/SiO2 devices, explicitly modelling…
We investigated the quantum gates of coupled quantum dots, theoretically, when charging effects can be observed. We have shown that the charged states in the qubits can be observed by the channel current of the MOSFET structure.
A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface…
We investigate transport through an exotic ``charge'' qubit composed of two strongly capacitively coupled quantum dots (QDs), each being independently connected to a side gate which in general exhibits a fluctuating electrostatic field…
We analyze and give estimates for the long-distance coupling via floating metallic gates between different types of spin qubits in quantum dots made of different commonly used materials. In particular, we consider the hybrid, the…