Related papers: Charge qubits in semiconductor quantum computer ar…
A new scheme is proposed for rotations of a double-donor charge qubit whose logical states are defined by the two lowest energy states of a single electron localized around one or another donor. It is shown that making use of the microwave…
Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; however, long shuttling trajectories are guaranteed to encounter…
Capacitively coupled semiconductor spin qubits hold promise as the building blocks of a scalable quantum computing architecture with long-range coupling between distant qubits. However, the two-qubit gate fidelities achieved in experiments…
Charge noise has been one of the main issues in realizing high fidelity two-qubit quantum gates in semiconductor based qubits. Here, we study the influence of quasistatic noise in quantum dot detuning on the controlled phase gate for spin…
A charge qubit couples to environmental electric field fluctuations through its dipole moment, resulting in fast decoherence. We propose the p orbital (pO) qubit, formed by the single electron, p-like valence states of a five-electron Si…
Electron-phonon coupling is known to play an important role in the charge dynamics of semiconductor quantum dots. Here we explore its role in the combined charge-photon dynamics of cavity-coupled double quantum dots. Previous work on these…
Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest…
Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum…
Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical…
There has been significant progress in the implementation and manipulation of singlet-triplet qubits in GaAs quantum dots. Given the considerably longer spin coherence times measured in Si, considerable interest has been generated recently…
Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar…
Charge noise remains the primary obstacle to the development of quantum information technologies with semiconductor spin qubits. We use an exact analytical calculation to determine the effects of quasistatic charge noise on a ring of three…
Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing.…
Quantum dot hybrid qubits exploit an extended charge-noise sweet spot that suppresses dephasing and has enabled the experimental achievement of high-fidelity single-qubit gates. However, current proposals for two-qubit gates require tuning…
Interactions between electrons can strongly affect the shape and functionality of multi-electron quantum dots. The resulting charge distributions can be localized, as in the case of Wigner molecules, with consequences for the energy…
The performance and scalability of silicon spin qubits depend directly on the value of the conduction band valley splitting. In this work, we investigate the influence of electromagnetic fields and the interface width on the valley…
Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor…
We theoretically study a single-electron spin-valley qubit in an electrostatically defined quantum dot in a transition metal dichalcogenide monolayer, focusing on the example of MoS$_2$. Coupling of the qubit basis states for coherent…
Controlled adiabatic transfer of a single electron through a chain of quantum dots has been recently achieved in GaAs and Si/SiGe based quantum dots, opening prospects for turning stationary spin qubits into mobile ones, and solving in this…
(001) Si spin qubits are being intensively studied because they have structures similar to that of CMOS devices currently being produced, and thus have the advantage of utilizing state-of-the-art miniaturization, integration, and…