Related papers: Quantum Spin Hall Effect in Graphene
The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability,…
Recent theories predict dissipationless spin current induced by an electric field in doped semiconductors. Nevertheless, the charge current is still dissipative in these systems. In this work, we theoretically predict the dissipationless…
We show that the extrinsic spin Hall effect can be engineered in monolayer graphene by decoration with small doses of adatoms, molecules, or nanoparticles originating local spin-orbit perturbations. The analysis of the single impurity…
We develop a simple model of surface states for topological insulators, developing matching relations for states on surfaces of different orientations. The model allows one to write simple Dirac Hamiltonians for each surface, and to…
A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…
We model the quantum Hall effect in heterostructures made of two gapped graphene stripes with different gaps, $\Delta_1$ and $\Delta_2$. We consider two main situations, $\Delta_1=0,\Delta_2\neq0$ and $\Delta_1=-\Delta_2$. They are…
Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…
The recent discovery of fractional quantum Hall states in graphene raises the question of whether the physics of graphene and its bilayer offers any advantages over GaAs-based materials in exploring strongly-correlated states of…
Electron-electron interactions play an important role in graphene and related systems and can induce exotic quantum states, especially in a stacked bilayer with a small twist angle. For bilayer graphene where the two layers are twisted by a…
We study the spin-polarized $\nu=0$ Landau-level state of graphene. Due to the electron-hole attractive interaction, electrons and holes can bound into pairs. These pairs can then condense into a spin-triplet superfluid ground state: a spin…
Electronic band structures in hydrogenated graphene are theoretically investigated by means of first-principle calculations and an effective tight-binding model. It is shown that regularly designed hydrogenation to graphene gives rise to a…
We study the spin edge states in the quantum spin-Hall (QSH) effect on a single-atomic layer graphene ribbon system with both intrinsic and Rashba spin-orbit couplings. The Harper equation for solving the energies of the spin edge states is…
The substrate-induced topological phase transition of silience is a formidable obstacle for developing silicene-based materials and devices for compatibility with current electronics by using its topologically protected dissipationless edge…
The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as…
We investigate topological phases of bilayer graphene subject to antiferromagnetic exchange field, interlayer bias, and irradiated by light. We discover that at finite bias and light intensity the system transitions into a previously…
We study the quantum Hall effect in a monolayer graphene by using an approach based on thermodynamical properties. This can be done by considering a system of Dirac particles in an electromagnetic field and taking into account of the edges…
The nature of the electronic ground states in strained undoped graphene at weak interaction between electrons is discussed. After providing a lattice realization of the strain-induced axial magnetic field we numerically find the…
We studied the unusual Quantum Hall Effect (QHE) near the charge neutrality point (CNP) in high-mobility graphene sample for magnetic fields up to 18 T. We observe breakdown of the delocalized QHE transport and strong increase in…
We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N$=$2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between…
Topological phases of electrons such as topological insulators and quantum Hall states typically require strong spin-orbit coupling or magnetic fields. In this study, we consider an electron system coupled to a spin system, where electrons…