Competing Fractional Quantum Hall and Electron Solid Phases in Graphene
Mesoscale and Nanoscale Physics
2019-01-23 v2
Abstract
We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between incompressible fractional quantum Hall states, and electron solid phases. The tunability of graphene allows us to measure the - phase diagram of the electron-solid phase. The hierarchy of reentrant states suggest spin and valley degrees of freedom play a role in determining the ground state energy. We find that the melting temperature scales with magnetic field, and construct a phase diagram of the electron liquid-solid transition.
Cite
@article{arxiv.1807.10523,
title = {Competing Fractional Quantum Hall and Electron Solid Phases in Graphene},
author = {Shaowen Chen and Rebeca Ribeiro-Palau and Kang Yang and Kenji Watanabe and Takashi Taniguchi and James Hone and Mark O. Goerbig and Cory R. Dean},
journal= {arXiv preprint arXiv:1807.10523},
year = {2019}
}