Related papers: Spontaneous current generation in gated nanostruct…
We report on nonequilibrium interaction phenomena between adjacent but electrostatically separated nanostructures in GaAs. A current flowing in one externally biased nanostructure causes an excitation of electrons in a circuit of a second…
We study a resistively shunted semiconductor superlattice subject to a high-frequency electric field. Using a balance equation approach that incorporates the influence of the electric circuit, we determine numerically a range of amplitude…
A boundary between two d-wave superconductors or an s-wave and a d-wave superconductor generally breaks time-reversal symmetry and can generate spontaneous currents due to proximity effect. On the other hand, surfaces and interfaces in…
Graphene field-effect transistors are widely used for development of biosensors. However, certain fundamental questions about details of their functioning are not fully understood yet. One of these questions is the presence of gate…
We study direct current (DC) generation induced by microwave irradiation to ferroelectric materials. The DC generation originates from microwave absorption called dielectric loss due to the delay of dielectric response. Such current…
We study electron transport through a semiconductor superlattice subject to an electric field parallel to and a magnetic field perpendicular to the growth axis. Using a single miniband, semiclassical balance equation model with both elastic…
We calculate the rate of acoustic phonon generation by a current-carrying, ballistic quantum channel, defined in a two-dimensional electron gas by a split-gate. Both uniform and nonuniform channels are considered. The generation rate of…
We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain…
Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is…
Local control of superconducting circuits by high-impedance electrical gates offers potential advantages in superconducting logic, quantum processing units, and cryoelectronics. Recent experiments have reported gate-controlled supercurrent…
A theory of d.c. electric current induced in a quantum channel by a propagating surface acoustic wave (acoustoelectric current) is worked out. The first observation of the acoustoelectric current in such a situation was reported by J. M.…
We discuss an effect of dc current and dc voltage (stopping bias) generation in a semiconductor superlattice subjected by an ac electric field and its phase-shifted n-th harmonic. In the low field limit, we find a simple dependence of dc…
The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute…
The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains…
Quantum Hall phases are gapped in the bulk but support chiral edge modes, both charged and neutral. Here we consider a circuit where the path from the source of electric current to the drain necessarily passes through a segment consisting…
We predict that in a narrow gap III-V semiconductor quantum well or a wire an observable spin current can be generated with a time dependent gate to modify the Rashba spin-orbit coupling constant. Methods to rectify the so generated AC…
Recent symmetry considerations (Phys. Rev. Lett. {\bf 84} 2358 (2000)) have shown that dc currents may be generated in the stochastic layer of a system describing the motion of a particle in a one-dimensional potential in the presence of an…
In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the…
Gate-controlled supercurrent (GCS) in superconductor nanobridges has recently attracted attention as a means to create superconducting field effect transistors. Despite the clear advantage for applications with low power consumption and…
Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…