Related papers: Spontaneous current generation in gated nanostruct…
We consider the spontaneous creation of a dc voltage across a strongly coupled semiconductor superlattice subjected to THz radiation. We show that the dc voltage may be approximately proportional either to an integer or to a half- integer…
We demonstrate a new, nonlinear optical effect of electric currents. First, a steady current is generated by applying a voltage on a doped GaAs crystal. We demonstrate that this current induces second-harmonic generation of a probe laser…
We study charge transport in a source-channel-drain system with a time-varying applied gate potential acting on the channel. We calculate both the current flowing from the source into the channel and out of the channel into the drain. The…
Shift current is a DC current generated from nonlinear light-matter interaction in a non-centrosymmetric crystal and is considered a promising candidate for next generation photovoltaic devices. The mechanism for shift currents in real…
We report the discovery of a new mechanism of spontaneous generation of a magnetic flux in a superconductor cooled through $T_c$. The sign of the spontaneous flux changes randomly from one cooldown to the next, and follows a Gaussian…
In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population,…
The non-selective voltage activated cation channel from the human red cells, which is activated at depolarizing potentials, has been shown to exhibit counter-clockwise gating hysteresis. We have analyzed the phenomenon with the simplest…
We observe a series of sharp resonant features in the tunnelling differential conductance of InAs quantum dots. We found that dissipative quantum tunnelling has a strong influence on the operation of nano-devices. Because of such tunnelling…
We measure the frequency dependent capacitance of a gate covering the edge and part of a two-dimensional electron gas in the quantum Hall regime. In applying a positive gate bias, we create a metallic puddle under the gate surrounded by an…
The action potential signal of nerve and muscle is produced by voltage sensitive channels that include a specialized device to sense voltage. Gating currents of the voltage sensor are now known to depend on the back-and-forth movements of…
We predict that the flow of unpolarized current in electron-doped GaAs and InP at room temperature is unstable at high electric fields to the dynamic formation of spin-polarized current pulses. Spin-polarized current is spontaneously…
The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological…
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance…
We consider a finite range ac-biased front gate acting upon a quantum channel with Rashba and Dresselhaus spin-orbit interaction effects. The ac-biased gate, giving rise to a dynamical Rashba coupling, causes spin-resolved coherent resonant…
We calculate the phonons in a graphene nanoconstriction(GNC) in the presence of a high current density. The Joule-heating, current-induced forces, and coupling to electrode phonons is evaluated using first principles nonequilibrium DFT-NEGF…
The effect of a perpendicular magnetic field on the quantized current induced by a surface acoustic wave in a quasi-1D channel is studied. The channel has been produced experimentally in a GaAs heterostructure by shallow etching techniques…
The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime…
We find that, under appropriate conditions, electrons can pass a barrier etched across a two dimensional electron gas (2DEG) by field emission from the GaAs/AlGaAs heterojunction into a second, low-density 2DEG formed deep in the substrate.…
The induction of an s-wave component in a d-wave superconductor is considered. Near the {110}-oriented edges of such a sample, the induced s-wave order parameter together with d-wave component forms a complex combination d+e^{i\phi} s,…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…