Gate-controlled supercurrent (GCS) in superconductor nanobridges has recently attracted attention as a means to create superconducting field effect transistors. Despite the clear advantage for applications with low power consumption and high switching speeds, the microscopic mechanism of the field effect is still under debate. In this work, we realize GCS for the first time in an epitaxial superconductor, which is created as a shell on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying ≃± 23V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study on the temperature and magnetic field dependencies of GCS suggests that hot electron injection alone cannot explain our experimental findings.
@article{arxiv.2106.06619,
title = {Gate-controlled supercurrent in epitaxial Al/InAs nanowires},
author = {Tosson Elalaily and Olivér Kürtössy and Zoltán Scherübl and Martin Berke and Gergő Fülöp and István Endre Lukács and Thomas Kanne and Jesper Nygård and Kenji Watanabe and Takashi Taniguchi and Péter Makk and Szabolcs Csonka},
journal= {arXiv preprint arXiv:2106.06619},
year = {2021}
}