Gate tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single crystalline InAs, InSb and InAs1−xSbx nanowires with epitaxial superconductors and in-situ shadowed junctions in a single-step molecular beam epitaxy process. We investigate correlations between fabrication parameters, junction morphologies, and electronic transport properties of the junctions and show that the examined in-situ shadowed junctions are of significantly higher quality than the etched junctions. By varying the edge sharpness of the shadow junctions we show that the sharpest edges yield the highest junction transparency for all three examined semiconductors. Further, critical supercurrent measurements reveal an extraordinarily high ICRN, close to the KO−2 limit. This study demonstrates a promising engineering path towards reliable gate-tunable superconducting qubits.
@article{arxiv.2003.04487,
title = {Transparent Gatable Superconducting Shadow Junctions},
author = {Sabbir A. Khan and Charalampos Lampadaris and Ajuan Cui and Lukas Stampfer and Yu Liu and S. J. Pauka and Martin E. Cachaza and Elisabetta M. Fiordaliso and Jung-Hyun Kang and Svetlana Korneychuk and Timo Mutas and Joachim E. Sestoft and Filip Krizek and Rawa Tanta and M. C. Cassidy and Thomas S. Jespersen and Peter Krogstrup},
journal= {arXiv preprint arXiv:2003.04487},
year = {2020}
}