Related papers: Heterostructure unipolar spin transistors
We propose three-terminal spin devices with graphene nanoribbons (terminals) and a graphene flake (channel) to generate a highly spin-polarized current without an external magnetic field or ferromagnetic electrodes. The Hubbard repulsion…
Champions of spintronics often claim that spin based signal processing devices will vastly increase speed and/or reduce power dissipation compared to traditional charge based electronic devices. Yet, not a single spintronic device exists…
Spin accumulation is a crucial but imprecise concept in spintronics. In metal-based spintronics it is characterized in terms of semiclassical distribution functions. In semiconductors with a strong spin-orbit coupling the spin accumulation…
We argue that spin-sensitive quasiparticle scattering may generate electron-hole imbalance in superconducting structures, such as, e.g., superconducting-normal hybrids with spin-active interfaces. We elucidate a transparent physical…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…
Spinner mixtures consisting of both clockwise and counterclockwise self-spinning particles are often expected to phase separate. However, we demonstrate that such a demixing is absent for dimer (or rod-like) spinners. These particles always…
Transtor and memtranstor are the fourth basic linear and memory elements, which allows direct coupling of charge (q) to magnetic flux ({\phi}) via linear and non-linear ME effects, respectively. It is found here that large variation of…
In Maxwellian electrodynamics, specific properties of the responses to external fields are included in constitutive equations. For noncentrosymmetric semiconductors, spin conductivity can be expressed in terms of the contribution of…
Spin-driven multiferroics exhibit strong magnetoelectric coupling, with notable polarization changes under a magnetic field, but these effects are usually limited to high-Z magnetic insulators with low electronic polarization. In this work,…
A general spin symmetry argument is proposed for spin currents in semiconductors. In particular, due to the symmetry with respect to spin polarization of the helicity eigenstates of the Luttinger Hamiltonian for a hole-doped semiconductor,…
The steady-state current-voltage response of ion-selective systems varies as the number of ion-selective components is varied. For the highly investigated unipolar system, including only one ion-selective component, it has been shown that…
A hybrid ferromagnet-superconductor spin valve is proposed. Its operation relies on the interplay between nonequilibrium transport and proximity-induced exchange coupling in superconductors. Huge tunnel magnetoresistance values as large as…
A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…
High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping…
A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons…
Transport properties of ferromagnetic/non-magnetic/ferromagnetic single electron transistors are investigated as a function of external magnetic field, temperature, bias and gate voltage. By designing the magnetic electrodes to have…
A superconductor-normal metal-superconductor mesoscopic Josephson junction has been realized in which the critical current is tuned through normal current injection using a symmetric electron cooler directly connected to the weak link. Both…
The equivalent electrical circuit of the Ebers-Moll type is introduced for magnetic bipolar transistors. In addition to conventional diodes and current sources, the new circuit comprises two novel elements due to spin-charge coupling. A…
We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in an in-plane magnetic field to be measured. A transverse focusing geometry is used to couple current from…