Related papers: Heterostructure unipolar spin transistors
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic…
We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different…
A recently introduced Early modeling of transistors is applied to the study of the common collector amplifier (or emitter follower), an important type of electronic circuit typically employed as buffer, being characterized by near unit…
We report a novel method to reduce the collector-emitter offset-voltage of the wide bandgap SiC-P-emitter lateral HBTs using a dual-bandgap emitter. In our approach, the collector-emitter offset-voltage VCE(offset) is reduced drastically by…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
The recent advent of a new class of magnetic material named as {\it altermagnet} (AM), characterized by a combination of momentum-dependent spin splitting with zero net magnetization, has opened up promising prospects for spintronic…
The deviations of cryogenic collector current-voltage characteristics of SiGe heterojunction bipolar transistors (HBTs) from ideal drift-diffusion theory have been a topic of investigation for many years. Recent work indicates that direct…
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…
The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments…
It is known that when strong electric field is applied to a semiconductor sample, the current voltage characteristic deviates from the linear response. In this letter, we propose a new point of view of nonlinearity in semiconductors which…
This paper reports on the improvement of the differential current gain in the spin-torque transistor based on two independent innovations, viz.the use of magnetic insulators and the spin Hall effect. Since, except for a few examples, spin…
We demonstrate theoretically that the spin polarization of current can be electrically amplified within nonmagnetic semiconductors by exploiting the fact the spin current, compared to the charge current, is weakly perturbed by electric…
A heterojunction tunneling field effect transistor based on armchair graphene nanoribbons is proposed and studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By using low…
Many Heusler compounds are predicted to be ferromagnetic half metals in the bulk, which makes them promising compounds for spintronics. However, for devices the transport spin polarization at specific interfaces requires optimization. We…
The high efficiency of a tunnel magnetic transistor as a source of spin-polarized electrons has been proven recently [X. Jiang {\it et al.}, Phys. Rev. Lett. {\bf 90}, 256603 (2003)]. A concept of this device based on an active group of hot…
Superconductors are famously capable of supporting persistent electrical currents, that is, currents that flow without any measurable decay as long as the material is kept in the superconducting state. We introduce here a class of materials…
The phenomenon of mesoscopic Spin-Hall effect reveals in a nonequilibrium spin accumulation (driven by electric current) at the edges of a ballistic conductor or, more generally, in the regions with varying electron density. In this paper…
A low cost, stable, programmable, unipolar current source is described. The circuit is designed in view of a modular arrangement, suitable for applications where several DC sources must be controlled at once. A hybrid switching/linear…
Transistors are the cornerstone of modern electronics. Yet, their relatively complex characteristics, allied with often observed great parameter variation, remain a challenge for discrete and integrated electronics. Much of transistor…
We demonstrate how the Rashba spin-orbit coupling in semiconductor heterostructures can produce and control a spin-polarized current without ferromagnetic leads. Key idea is to use spin-double refraction of an electronic beam with a nonzero…