Related papers: Metal/organic/metal bistable memory devices
The interface between a metal electrode and an organic semiconductor (OS) layer has a defining role in the properties of the resulting device. To obtain a desired performance, interlayers are introduced to modify the adhesion and growth of…
In this work, we study lattice structures that exhibit a bistable behavior, i. e., they can snap from one stable state to another, and are also completely reversible, capable of reverting back to its original state through a heat treatment.…
We propose an Ising machine made of microelectromechanical systems (MEMS), where the annealing process is automatically executed by a dissipation mechanism. The core structure is a series of buckled plates. Two stable positions of each…
Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…
Non-volatile memory devices have received a lot of interest in both industry and academia in the last decade. Transition metal oxide-based memories offer potential applications as universal memory and artificial synapses. Here we focus on…
In Phys. Rev. Lett. 91 167206 (2003), Sun et al. study memory effects in an interacting nanoparticle system with specific temperature and field protocols. The authors claim that the observed memory effects originate from spin-glass dynamics…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for…
Molecule-based devices are envisioned to complement silicon devices by providing new functions or already existing functions at a simpler process level and at a lower cost by virtue of their self-organization capabilities. Moreover, they…
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…
This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated using a wet anisotropic oxidation of a silicon nanowire. One of the main issue was…
We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated…
While memory effects emerge from systems of wildly varying length- and time-scales, the reduction of a complex system with many interacting elements into one simple enough to be understood without also losing the complex behavior continues…
The dielectric constant of amorphous solids at low temperatures is governed by the dynamics of tunneling systems, small groups of atoms which tunnel between quasi equivalent potential minima. Recent experiments showed that at temperatures…
While most neuromorphic systems are based on nanoscale electronic devices, nature relies on ions for energy-efficient information processing. Therefore, finding memristive nanofluidic devices is a milestone toward realizing electrolytic…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
We numerically studied the required conditions for achieving a memory operation based on Kerr bistability in the presence of the thermo-optic effect in silicon nitride microring cavity systems. By comparing a side-coupled system and an…
Using molecular dynamics simulations with recently developed importance sampling methods, we show that the differential capacitance of a model ionic liquid based double-layer capacitor exhibits an anomalous dependence on the applied…
We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
We report the concept of a near-field memory device based on the radiative bistability effect in the system of two closely separated parallel plates of SiO$_2$ and VO$_2$ which exchange heat by thermal radiation in vacuum. We demonstrate…