Related papers: Metal/organic/metal bistable memory devices
In this Comment we report a phenomenon identical to that observed in ({Y. Sun, M. B. Salamon, K. Garnier and R. S. Averback, Phys. Rev. Lett. 91, 167206 (2003)}) for systems of NiFe{$_2$}O{$_4$} particles (mean size $\approx$ 3nm) embedded…
Using the Hubbard model on a 1D lattice and the "memory function" approach,we have calculated the electrical conductivity of a 1D system of correlated electrons on a lattice. We have determined the temperature and frequency profiles of the…
We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal…
Dual-layer resistive switching devices with horizontal W electrodes, vertical Pd electrodes and WOx switching layer formed at the sidewall of the horizontal electrodes have been fabricated and characterized. The devices exhibit…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…
The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one…
According to Moore law, the silicon semiconductor transistor based information system is facing its physical limitations due to fluctuations of random charge and leakage current. Molecular electronics is becoming more and more attractive…
Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room…
We have performed a series of measurements on the low temperature behavior of a magnetic nano-particle system. Our results show striking memory effects in the dc magnetization. Dipolar interactions among the nano-particles {\em suppress}…
We propose an optical memory cell based on ultrafast wavelength switching in coupled-cavity microlasers, featuring bistability between modes separated by several nanometers. A numerical implementation is demonstrated by simulating a…
Replicating the computational functionalities and performances of the brain remains one of the biggest challenges for the future of information and communication technologies. Such an ambitious goal requires research efforts from the…
Interfacing artificial functional materials and living neuronal tissues is at the forefront of bio-nano-technology. Attempts have been so far based onto microscale processing of metals and inorganic semiconductors as electrodes or…
Mechanical metamaterials composed of bistable elements have recently emerged as promising platforms for mechanical memory. Traditional approaches to writing information in these systems typically rely on localized actuation or predefined…
Dynamic reconfiguration of charge carriers in confined ion-channels under electrical stimulation produces memory effects, where the internal resistance depends on history of the electric field. Vermiculite nanofluidic devices harness this…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and…
Organic electrochemical transistors (OECTs) underpin a range of emerging technologies, from bioelectronics to neuromorphic computing, owing to their unique coupling of electronic and ionic charge carriers. In this context, various OECT…
Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses.…
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…