Near field thermal memory device
Materials Science
2014-11-04 v2
Abstract
We report the concept of a near-field memory device based on the radiative bistability effect in the system of two closely separated parallel plates of SiO and VO which exchange heat by thermal radiation in vacuum. We demonstrate that the VO plate, having metal-insulator transition at 340 K, has two thermodynamical steady-states. One can switch between the states using an external laser impulse. We show that due to near-field photon tunneling between the plates, the switching time is found to be only 5 ms which is several orders lower than in case of far field.
Cite
@article{arxiv.1408.5831,
title = {Near field thermal memory device},
author = {S. A. Dyakov and J. Dai and M. Yan and M. Qiu},
journal= {arXiv preprint arXiv:1408.5831},
year = {2014}
}
Comments
4 pages, 4 figures