Related papers: The Ebers-Moll model for magnetic bipolar transist…
Integrating semiconducting and magnetic materials could combine transistor-like operation with nonvolatility and enable architectures such as logic-in-memory. Here, we employ correlated electrical transport and scanning nitrogen-vacancy…
Spin waves in insulating magnets are ideal carriers for spin currents with low energy dissipation. An electric field can modify the dispersion of spin waves, by directly affecting, via spin-orbit coupling, the electrons that mediate the…
In magnetic systems with dominating easy-plane anisotropy the magnetization can be described by an effective one dimensional equation for the in-plane angle. Re-deriving this equation in the presence of spin-transfer torques, we obtain a…
Account of an intrinsic spin-orbit coupling in the valence bands of common semiconductors yields the scalar spin-orbit-rotation term in the effective-mass Hamiltonian of the conduction-band electron. This result is obtained within the…
We analyze theoretically magnetoresistance of high mobility two-dimensional electron systems being illuminated by multiple radiation sources. In particular, we study the influence on the striking effect of microwave-induced resistance…
A very simple low cost bipolar transistor tester for physics lab is given. The proposed circuit not only indicates the type of transistor(NPN/PNP) but also indicates the terminals(emitter, base and collector) using simple dual color…
Consider a three dimensional system which looks like a cross-connected pipe system, i.e. a small sample coupled to a finite number of leads. We investigate the current running through this system, in the linear response regime, when we…
Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…
One of the more profound mysteries of physics is how nature ties together EM fields to form an electron. A way to do this is examined in this study. A bare magnetic dipole containing a flux quantum spins stably, and produces an inverse…
We discuss theoretically the properties of an electromechanical oscillating system whose operation is based upon the cyclic conservative conversion between gravitational potential, kinetic, and magnetic energies. The system consists of a…
The magnetic dipole transitions between the vector mesons $B_c^*$ and their relevant pseudoscalar mesons $B_c$ ($B_c$, $B_c^*$, $B_c(2S)$, $B_c^*(2S)$, $B_c(3S)$ and $B_c^*(3S)$ etc, the binding states of $(c\bar{b})$ system) of the $B_c$…
This article surveys the physics of systems proximate to Mott insulators, and presents a classification using conventional and topological order parameters. This classification offers a valuable perspective on a variety of conducting…
We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third…
Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an…
We theoretically propose a new route to control magnetic and topological orders in a broad class of insulating magnets with a DC electric field. We show from the strong-coupling expansion that magnetic exchange interactions along the…
We examine electric response of a linearly polarized light normally shed on a cross-shaped quasi 2-dimensional InGaAs/InAlAs system with structure inversion asymmetry. The photo-excited conduction electrons carry a pure spin current with…
An efficient method to compute magnetic exchange interactions in systems with strong correlations is introduced. It is based on a magnetic force theorem which evaluates linear response due to rotations of magnetic moments and uses a novel…
An emerging paradigm in modern electronics is that of CMOS + $\sf X$ requiring the integration of standard CMOS technology with novel materials and technologies denoted by $\sf X$. In this context, a crucial challenge is to develop accurate…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…
We present a model that explains two phenomena, recently observed in high-mobility Si-MOS structures: (i) the strong enhancement of metallic conduction at low temperatures, T<2 K, and (ii) the occurrence of the metal-insulator transition in…