Related papers: Weak Localization Thickness Measurements of Si:P D…
Thin layers of black phosphorus present an ideal combination of a 2D material with a tunable direct bandgap and high carrier mobility. However the material suffers from degradation in ambient conditions due to an oxidation reaction which…
Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial…
Silicon can be heavily doped with phosphorus in a single atomic layer (a $\delta$ layer), significantly altering the electronic structure of the conduction bands within the material. Recent progress has also made it possible to further dope…
We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…
Isolation and characterization of mechanically exfoliated black phosphorus flakes with a thickness down to two single-layers is presented. A modification of the mechanical exfoliation method, which provides higher yield of atomically thin…
Electron transport properties of a topological insulator Bi$_2$Se$_3$ thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are…
Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer…
We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $\delta$-layers. We show that, in spite of the known challenges in producing highly confined Sb $\delta$-layers, sufficient…
We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the…
Density functional theory and many-body (GW+BSE) calculations of transmittance, absorbance, and reflectance are performed on silicon and black phosphorus (BP). We find that a damping value of 0.01 used in the dielectric function calculation…
We develop and test a method for measuring the gravitational lensing induced distortion of faint background galaxies. We first describe how we locate the galaxies and measure a 2-component `polarisation' or ellipticity statistic $e_\alpha$…
We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in…
We investigate points of circular polarization in the far field of elliptically polarized dipoles and establish a relation between the angular position and helicity of these C points and the dipole moment. In the case of highly eccentric…
We look at the magnetic field induced weak localisation peak of graphene samples with different mobilities. At very low temperatures, low mobility samples exhibit a very broad peak as a function of the magnetic field, in contrast to higher…
The "textbook" phonon mean free path (MFP) of heat carrying phonons in silicon at room temperature is ~40 nm. However, a large contribution to the thermal conductivity comes from low-frequency phonons with much longer MFPs. We present a…
A weak-localization effect has been studied in macroscopically inhomogeneous 2D system. It is shown, that although the real phase breaking length tends to infinity when the temperature tends to zero, such a system can reveal a saturated…
In this work, we reported uniform layer-by-layer sublimation of black phosphorus under heating below 600 K. The uniformity and crystallinity of BP samples after thermal thinning were confirmed by Raman spectra and 2D Raman imaging. A…
Test measurements on the silicon pixel detector for the beam trajectory monitor at the free electron laser of the TESLA test facility are presented. To determine the electronic noise of detector and read-out and to calibrate the signal…
Based on extensive first principle calculations, we explore the thickness dependent effective di- electric constant and slab polarizability of few layer black phosphorene. We find that the dielectric constant in ultra-thin phosphorene is…
We explore the phase coherence of thin films of the topological insulator material Bi2Se2Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films…