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Related papers: 2D Metal-Insulator transition as a percolation tra…

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Using recent insights obtained in heavy fermion physics on the thermodynamic singularity structure associated with quantum phase transitions, we present here an experimental strategy to establish if the zero-temperature transition in the…

Strongly Correlated Electrons · Physics 2007-05-23 B. Hosseinkhani , J. Zaanen

Results on the superconductor to insulator transition in two-dimensional films are analyzed in terms of coupling of the system to a dissipative bath. Upon lowering the temperature the parameter that controls this coupling becomes relevant…

Superconductivity · Physics 2009-10-31 N. Mason , A. Kapitulnik

Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are…

Materials Science · Physics 2018-11-14 L. Craco , M. S. Laad , S. Leoni

The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on…

Strongly Correlated Electrons · Physics 2023-01-16 M. Yu. Melnikov , A. A. Shashkin , V. T. Dolgopolov , Amy Y. X. Zhu , S. V. Kravchenko , S. -H. Huang , C. W. Liu

We present a model that explains two phenomena, recently observed in high-mobility Si-MOS structures: (i) the strong enhancement of metallic conduction at low temperatures, T<2 K, and (ii) the occurrence of the metal-insulator transition in…

Strongly Correlated Electrons · Physics 2009-10-30 V. M. Pudalov

We investigate the doping-driven metal-insulator transition of the (2+1)-dimensional Hubbard model in the path-integral formalism with the tensor renormalization group method. We calculate the electron density $\langle n\rangle$ as a…

Strongly Correlated Electrons · Physics 2022-03-23 Shinichiro Akiyama , Yoshinobu Kuramashi , Takumi Yamashita

Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be…

The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on…

Materials Science · Physics 2007-05-23 P. P. Boriskov , A. L. Pergament , A. A. Velichko , G. B. Stefanovich , N. A. Kuldin

We investigate the metal-insulator transition occurring in semiconductors with magnetic impurities when lowering temperature. In contrast to the usually considered percolation transition in the non-uniform medium induced by the localization…

Materials Science · Physics 2015-05-19 E. Z. Meilikhov , R. M. Farzetdinova

We present the results of electron delocalization in thin films of finite thickness at finite tem- parature induced by thickness of the film and temparature. The two dimensional results show temparature induced metal-insulator transition…

Strongly Correlated Electrons · Physics 2014-12-09 R. K. Brojen Singh

The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions,…

Strongly Correlated Electrons · Physics 2017-12-06 S. Anissimova , S. V. Kravchenko , A. Punnoose , A. M. Finkel'stein , T. M. Klapwijk

The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still…

Strongly Correlated Electrons · Physics 2021-01-04 Byoung Hee Moon , Gang Hee Han , Miloš M. Radonjić , Hyunjin Ji , Vladimir Dobrosavljević

We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain…

We have found that the conduction in Si-MOS structures has a substantial imaginary component in the metallic phase for the density range 6 \times n_c > n > n_c, where n_c is the critical density of the metal-insulator transition. For high…

Strongly Correlated Electrons · Physics 2007-05-23 V. M. Pudalov , G. Brunthaler , A. Prinz , G. Bauer , B. I. Fouks

We show here that the regularization of the conductivity resulting from the bosonic interactions on the `insulating' (quantum disordered) side of an insulator-superconductor transition in 2D gives rise to a metal with a finite conductivity,…

Condensed Matter · Physics 2009-10-31 Denis Dalidovich , Philip Phillips

We investigate the gate voltage dependence of capacitance of a system gate - 2D electron gas (C-Vg). The abrupt drop of capacitance at decreasing concentration was found. The possible reasons of this drop, namely inhomogeneity of electron…

Mesoscale and Nanoscale Physics · Physics 2010-09-22 A. A. Sherstobitov , G. M. Minkov , A. V. Germanenko , O. E. Rut , I. V. Soldatov , B. N. Zvonkov

The two-dimensional electron gas at the LaTiO3/SrTiO3 or LaAlO3/SrTiO3 oxide interfaces becomes superconducting when the carrier density is tuned by gating. The measured resistance and superfluid density reveal an inhomogeneous…

Functionalities in crystalline materials are determined by 3-dimensional collective interactions of atoms. The confinement of dimensionality in condensed matter provides an exotic research direction to understand the interaction of atoms,…

The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Yuval Yaish , Oleg Prus , Evgeny Buchstab , Gidi Ben Yoseph , Uri Sivan , Iddo Ussishkin , Ady Stern

Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…

Mesoscale and Nanoscale Physics · Physics 2007-10-09 E. H. Hwang , S. Adam , S. Das Sarma