Related papers: 2D Metal-Insulator transition as a percolation tra…
By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($\sigma$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times…
We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities…
The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical…
The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation…
We perform combined resistivity and compressibility studies of two-dimensional hole and electron systems which show the apparent metal-insulator transition - a crossover in the sign of dR/dT with changing density. No thermodynamic anomalies…
We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime ($p\agt 4 \times 10^{9}$…
The observation of a carrier-density driven metal-insulator transition in n-type GaAs-based heterostructure is reported. Although weaker than in comparable-quality p-type GaAs samples, the main features of the transition are rather similar.
We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…
Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier…
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
A simple non-interacting-electron model, combining local quantum tunneling and global classical percolation (due to a finite dephasing time at low temperatures), is introduced to describe a metal-insulator transition in two dimensions. It…
We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…
We report a detailed scaling analysis of resistivity \rho(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and…
We theoretically consider the carrier density tuned (apparent) two-dimensional (2D) metal-insulator-transition (MIT) in semiconductor heterostructure-based 2D carrier systems as arising from a classical percolation phenomenon in the…
The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour.…
Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a…
Transport in graphene nanoribbons with an energy gap in the spectrum is considered in the presence of random charged impurity centers. At low carrier density, we predict and establish that the system exhibits a density inhomogeneity driven…