English

Observation of the Metal-Insulator Transition in Two-Dimensional n-type GaAs

Mesoscale and Nanoscale Physics 2009-10-31 v1
Authors: Y. Hanein , D. Shahar , J. Yoon , C. C. Li , D. C. Tsui , Hadas Shtrikman
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Abstract

The observation of a carrier-density driven metal-insulator transition in n-type GaAs-based heterostructure is reported. Although weaker than in comparable-quality p-type GaAs samples, the main features of the transition are rather similar.

Keywords

metal-insulator transition two-dimensional electron gas GaAs heterostructure carrier density transport properties

Cite

@article{arxiv.cond-mat/9808251,
  title  = {Observation of the Metal-Insulator Transition in Two-Dimensional n-type GaAs},
  author = {Y. Hanein and D. Shahar and J. Yoon and C. C. Li and D. C. Tsui and Hadas Shtrikman},
  journal= {arXiv preprint arXiv:cond-mat/9808251},
  year   = {2009}
}

Comments

3 pages, 3 figures

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