The problem of screening the Coulomb interaction between charge carriers in type II heterostructures based on transition metal dichalcogenides is Analytically solved. At a sufficiently high density of charge carriers, the density dependence of the interlayer exciton energy is obtained. The energy of the interlayer exciton tends to zero in the metal--insulator transition point. The presented scheme of calculations makes it possible to find the temperature dependence of the density of this transition.
@article{arxiv.2205.04286,
title = {Metal-insulator transition in type II heterostructures based on transition metal dichalcogenides},
author = {Pavel V. Ratnikov},
journal= {arXiv preprint arXiv:2205.04286},
year = {2022}
}