It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- action and interlayer hopping. This balance depends on layer thickness, momentum space symmetry points and applied gate fields. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as major source for the observed photoluminesence.
@article{arxiv.1703.02191,
title = {Control of interlayer delocalization in 2H transition metal dichalcogenides},
author = {Kuang-Chung Wang and Teodor K. Stanev and Daniel Valencia and James Charles and Alex Henning and Vinod K. Sangwan and Aritra Lahiri and Daniel Mejia and Prasad Sarangapani and Michael Povolotskyi and Aryan Afzalian and Jesse Maassen and Gerhard Klimeck and Mark C. Hersam and Lincoln J. Lauhon and Nathaniel P. Stern and Tillmann Kubis},
journal= {arXiv preprint arXiv:1703.02191},
year = {2018}
}