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We present the band structure of CeIr$_3$ superconductor calculated within the dynamical mean field theory (DMFT). Standard GGA and GGA+U methods fail to reproduce the experimental electronic specific heat coefficient $\gamma_{\rm expt.}$…

Strongly Correlated Electrons · Physics 2022-01-05 Sylwia Gutowska , Bartlomiej Wiendlocha

We study by means of first-principles pseudopotential method the coordination defects in a-Si and a-Si:H, also in their formation and their evolution upon hydrogen interaction. An accurate analysis of the valence charge distribution and of…

Materials Science · Physics 2009-10-31 M. Peressi , M. Fornari , S. de Gironcoli , L. De Santis , A. Baldereschi

We describe an ab initio method for calculating the electronic structure, electronic transport, and forces acting on the atoms, for atomic scale systems connected to semi-infinite electrodes and with an applied voltage bias. Our method is…

Materials Science · Physics 2009-11-07 Mads Brandbyge , Jose-Luis Mozos , Pablo Ordejon , Jeremy Taylor , Kurt Stokbro

We implemented the charge self-consistent combination of Density Functional Theory and Dynamical Mean Field Theory (DMFT) in two full-potential methods, the Augmented Plane Wave and the Linear Muffin-Tin Orbital methods. We categorize the…

Strongly Correlated Electrons · Physics 2015-05-13 Kristjan Haule , Chuck-Hou Yee , Kyoo Kim

SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of…

Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor…

We report valence and conduction band alignments and offsets for heterojunctions between CdCr2Se4, an n-type ferromagnetic semiconductor, and the non-magnetic materials Si and GaAs, evaluated using density functional theory. We explore…

Materials Science · Physics 2007-05-23 J. M. Sullivan , S. C. Erwin

Quasi free standing monolayer graphene (QFMLG) grown on SiC by selective Si evaporation from the Si-rich SiC(0001) face and H intercalation displays irregularities in STM and AFM analysis, appearing as localized features, which we…

Mesoscale and Nanoscale Physics · Physics 2018-04-27 Tommaso Cavallucci , Yuya Murata , Makoto Takamura , Hiroki Hibino , Stefan Heun , Valentina Tozzini

Constrained density functional theory (CDFT) is used to evaluate the energy level alignment of a benzene molecule as it approaches a graphene sheet. Within CDFT the problem is conveniently mapped onto evaluating total energy differences…

Mesoscale and Nanoscale Physics · Physics 2016-01-27 Subhayan Roychoudhury , Carlo Motta , Stefano Sanvito

The purpose of this project is to investigate the use of charge couple devices (CCDs) to detect electrons directly. This can be done in transmission electron microscopy (TEM) for electrons over 100 KeV, but for space plasma instruments,…

Instrumentation and Detectors · Physics 2015-10-28 S. R. Mirfayzi

The electronic structures of cerium-based ternary 122 compounds Ce$M_{2}$Si$_{2}$, where $M =$ Ru, Rh, Pd, and Ag, are investigated systematically by using the density functional theory in combination with the single-site dynamical…

Strongly Correlated Electrons · Physics 2018-11-02 Haiyan Lu , Li Huang

Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a…

Mesoscale and Nanoscale Physics · Physics 2019-06-04 T. Hensgens , U. Mukhopadhyay , P. Barthelemy , S. Fallahi , G. C. Gardner , C. Reichl , W. Wegscheider , M. J. Manfra , L. M. K. Vandersypen

Charge-transfer effect under odd-parity crystalline electric field (CEF) is analyzed theoretically. In quantum-critical metal $\beta$-YbAlB$_4$, seven-fold configuration of B atoms surrounding Yb atom breaks local inversion symmetry at the…

Strongly Correlated Electrons · Physics 2020-03-18 Shinji Watanabe , Kazumasa Miyake

The high effective electric field ($E_\mathrm{eff}$) experienced by the unpaired electron in an atom or a molecule is one of the key ingredients in the success of electron electric dipole moment (eEDM) experiment and its precise calculation…

Atomic Physics · Physics 2016-03-28 Sudip Sasmal , Himadri Pathak , Malaya K. Nayak , Nayana Vaval , Sourav Pal

This article gives a comprehensive description of the fractal geometry of conformally-invariant (CI) scaling curves, in the plane or half-plane. It focuses on deriving critical exponents associated with interacting random paths, by…

Mathematical Physics · Physics 2007-05-23 Bertrand Duplantier

Instability of electron-positron vacuum in strong electric fields is studied. First, falling to the Coulomb center is discussed at $Z>137/2$ for a spinless boson and at $Z>137$ for electron. Then, focus is concentrated on description of…

Nuclear Theory · Physics 2021-06-04 D. N. Voskresensky

We report quasiparticle-energy calculations of the electronic bandstructure as measured by valence-band photoemission for selected II-VI compounds and group-III-nitrides. By applying GW as perturbation to the ground state of the fictitious,…

Materials Science · Physics 2009-11-11 Patrick Rinke , Abdallah Qteish , Joerg Neugebauer , Christoph Freysoldt , Matthias Scheffler

We introduce a combined density functional theory (DFT) and non-equilibrium Green's function (NEGF) framework to compute the capacitance of nanocapacitors and directly extract the dielectric response of a sub-nanometer dielectric under…

Computing electron-defect (e-d) interactions from first principles has remained impractical due to computational cost. Here we develop an interpolation scheme based on maximally localized Wannier functions (WFs) to efficiently compute e-d…

Materials Science · Physics 2020-03-19 I-Te Lu , Jinsoo Park , Jin-Jian Zhou , Marco Bernardi

The carbon vacancy in $4H$-SiC is a powerful minority carrier recombination center and a major cause of degradation of SiC-based devices. Despite the extensiveness of the literature regarding the characterization and modeling of the defect,…

Materials Science · Physics 2017-11-07 José Coutinho , Vitor J. B. Torres , Kamel Demmouche , Sven Öberg
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