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The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 A. T. Filip , B. H. Hoving , F. J. Jedema , B. J. van Wees

We theoretically study nonequilibrium spin transport in a superconducting wire connected by tunnel junctions to two ferromagnetic metal wires, each of which serves as an injector or detector of spin-polarized electron current. We present a…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Yositake Takane

Nonequilibrium charge transport in superconductors has been investigated intensely in the 1970s and 80s, mostly in the vicinity of the critical temperature. Much less attention has been focussed on low temperatures, and the role of the…

Superconductivity · Physics 2014-02-18 M. J. Wolf , F. Hübler , S. Kolenda , D. Beckmann

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…

Other Condensed Matter · Physics 2015-06-24 Igor Zutic , Jaroslav Fabian , Steven C. Erwin

A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework…

Materials Science · Physics 2007-05-23 R. Lipperheide , U. Wille

We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and…

Condensed Matter · Physics 2009-11-07 S. Das Sarma , Jaroslav Fabian , Xuedong Hu , Igor Zutic

We analyze spin-transport in semiconductors in the regime characterized by $T\stackrel{<}{\sim}T_F$ (intermediate to degenerate), where $T_F$ is the Fermi temperature. Such a regime is of great importance since it includes the lightly doped…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 Irene D'Amico

We study spin transport in forward and reverse biased junctions between a ferromagnetic metal and a degenerate semiconductor with a delta-doped layer near the interface at relatively low temperatures. We show that spin polarization of…

Materials Science · Physics 2009-11-11 V. V. Osipov , A. M. Bratkovsky

We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different…

Materials Science · Physics 2007-05-23 Dan Csontos , Sergio E. Ulloa

Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown…

Materials Science · Physics 2012-12-05 K. D. Belashchenko , J. K. Glasbrenner , A. L. Wysocki

Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility,…

Strongly Correlated Electrons · Physics 2016-11-18 A. A. Shashkin , S. V. Kravchenko

Spin-orbit interaction couples electron spins to electric fields and allows electrical monitoring of electron spins and electrical detection of spin dynamics. Competing mechanisms of spin-orbit interaction are compared, and optimal…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 Emmanuel I. Rashba

We study theoretically the spin transport in a nonmagnetic metal connected to ferromagnetic injector and detector electrodes. We derive a general expression for the spin accumulation signal which covers from the metallic to the tunneling…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 S. Takahashi , S. Maekawa

We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2) junction. We find that the spin current is strongly dependent on the spin configurations, the doping and space charge…

Mesoscale and Nanoscale Physics · Physics 2010-06-22 Yue Yu , Jinbin Li , S. T. Chui

Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in…

Mesoscale and Nanoscale Physics · Physics 2015-06-04 R. Jansen , A. M. Deac , H. Saito , S. Yuasa

We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy…

Condensed Matter · Physics 2009-11-07 J. D. Albrecht , D. L. Smith

Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable…

Materials Science · Physics 2021-06-11 Shobhit Goel , Nguyen Huynh Duy Khang , Le Duc Anh , Pham Nam Hai , Masaaki Tanaka

We investigate quantum coherence of electron spin transported through a semiconductor spintronic device, where spins are envisaged to be controlled by electrical means via spin-orbit interactions. To quantify the degree of spin coherence,…

Mesoscale and Nanoscale Physics · Physics 2017-08-23 Branislav K. Nikolic , Satofumi Souma

Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between…

A method for Monte Carlo simulation of 2D spin-polarized electron transport in III-V semiconductor heterojunction FETs is presented. In the simulation, the dynamics of the electrons in coordinate and momentum space is treated…

Condensed Matter · Physics 2010-10-12 Min Shen , Semion Saikin , Ming-C. Cheng , Vladimir Privman
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