Related papers: Reducing the critical switching current in nanosca…
Electric-field control of magnetism via inverse magnetostrictive effect is an efficient path towards improving energy-efficient storage and sensing devices based on giant magnetoresistance effect. In this letter, we report on lateral…
We explore theoretically the spin transport in nanostructures consisting of a gold quantum dot bridging nonmagnetic electrodes and two Mn12-Ph single molecule magnets (SMMs) that are thiol-bonded to the dot but are not in direct contact…
We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the…
Spin-orbit torque arising from the spin-orbit-coupled surface states of topological insulators enables current-induced control of magnetization with high efficiency. Here, alternating-current (AC) driven magnetization reversal is…
In a ferromagnetic nanodisk, the magnetization tends to swirl around in the plane of the disk and can point either up or down at the center of this magnetic vortex. This binary state can be useful for information storage. It is demonstrated…
We study magnetization reversal using various r.f. magnetic pulses. We show numerically that switching is possible with simple sinusoidal pulses; however the optimum approach is to use a frequency-swept (chirped) r.f. magnetic pulse, the…
In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, we have investigated spin transfer effects in complex spin-valve pillars with a diameter of 130nm developed for current-perpendicular to the plane (CPP)…
Manipulation of directional magnon propagation, known as magnon spin current, is essential for developing magnonic memory and logic devices featuring nonvolatile functionalities and ultralow power consumption. Magnon spin current can…
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of…
The computational Projective Dynamics method is used to analyze simulations of magnetization reversal in nanoscale magnetic pillars. It is shown that this method can be used to determine the magnetizations corresponding to the metastable…
Two-level fluctuations of the magnetization state of pseudo spin-valve pillars Co(10 nm)/Cu(10 nm)/Co(30 nm) embedded in electrodeposited nanowires (~40 nm in diameter, 6000 nm in length) are triggered by spin-polarized currents of 10^7…
Current-induced switching is considered in a magnetic junction. The junction includes pinned and free ferromagnetic layers which work in the regime of the high spin injection. It is shown that in such a regime the exchange magnetization…
Active manipulation of spin waves is essential for the development of magnon-based technologies. Here, we demonstrate programmable spin-wave filtering by resetting the spin structure of a pinned 90$^\circ$ N\'{e}el domain wall in a…
Current-induced magnetic switching of a single magnetic molecule attached to two ferromagnetic contacts is considered theoretically, with the main emphasis put on the role of intrinsic spin relaxation processes. It is shown that…
By numerically solving the equations of motion for atomic spins we show that internal spin-wave processes in large enough magnetic particles, initially in unstable states, lead to complete magnetization reversal and thermalization. The…
We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both…
We study theoretically the current-induced magnetic domain wall motion in a metallic nanowire with perpendicular magnetic anisotropy. The anisotropy can reduce the critical current density of the domain wall motion. We explain the reduction…
The electronic origin of a large resistance change in nanoscale junctions incorporating spin crossover molecules is demonstrated theoretically by using a combination of density functional theory and the non-equilibrium Green's functions…
This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the…
We present an eigenvalue-based approach for studying the magnetization dynamics in magnetic nanostructures driven by spintronic excitations, such as spin transfer torque and spin orbit torque. The approach represents the system dynamics in…