Related papers: Reducing the critical switching current in nanosca…
Spin reversal in magnetic nanomolecules and nanoclusters is considered. A method is suggested allowing, from one side, to keep for long time magnetic polarization in a metastable state and, from the other side, for starting the reversal…
The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…
Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as…
Investigation of the magnetic switching and magnetoresistive behaviour of nanoscale spin valve elements (SVs) of varying physical parameters such as shape, element size, dimensional aspect ratio, and array size is of vital importance for…
In a nanopillar with dipolarly coupled vortices, we present an experimental and simulation study to understand how the interplay between the bias field and spin transfer torque impacts reversal of the vortex cores. We find that, depending…
We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of…
Magnetization reversal in magnetic nanostructures is investigated numerically over time-scales ranging from fast switching processes on a picosecond scale to thermally activated reversal on a microsecond time-scale. A simulation of the…
In this article we analyze by modeling two possible mechanisms for magnetization switching using spin orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free…
We develop a theory for spin transport and magnetization dynamics in a quantum-dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate…
We demonstrate a quasi ballistic switching of the magnetization in a microscopic mag-neto resistive memory cell. By means of time resolved magneto transport we follow the large angle precession of the free layer magnetization of a spin…
Based on theoretical models, the dynamics of spin-torque nano-oscillators can be substantially modified by re-injecting the emitted signal to the input of the oscillator after some delay. Numerical simulations for vortex magnetic tunnel…
We show that magnetization reversal in spin-injection devices can be significantly faster when using a chirped r.f. rather than d.c current pulse. Alternatively one can use a simple sinusoidal r.f. pulse or an optimized series of…
This paper shows that the presence of two dynamical regimes, characterized by different precessional-axis, is the origin of the non-monotonic behavior of the output integrated power for large-amplitude magnetization precession driven by…
Strongly-interacting nanomagnetic arrays are crucial across an ever-growing suite of technologies. Spanning neuromorphic computing, control over superconducting vortices and reconfigurable magnonics, the utility and appeal of these arrays…
It is shown that a pulsed current driven through Ni nanowires provokes an irreversible magnetization reversal at a field distant from the spontaneous switching field $H_{sw}$ by $\Delta H$ of as much as 40 % of $H_{sw}$. The state of the…
We propose to use oscillating spin currents with slowly varying frequency (chirp) to manipulate and control the magnetization dynamics in a nanomagnet. By recasting the Landau-Lifshitz-Slonczewski equation in a quantum-like two-level…
Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the…
Magnetization switching due to a current-pulse in symmetric and asymmetric spin valves is studied theoretically within the macrospin model. The switching process and the corresponding switching parameters are shown to depend significantly…