Quasi ballistic magnetization reversal
Mesoscale and Nanoscale Physics
2009-11-07 v1
Abstract
We demonstrate a quasi ballistic switching of the magnetization in a microscopic mag-neto resistive memory cell. By means of time resolved magneto transport we follow the large angle precession of the free layer magnetization of a spin valve cell upon applica-tion of transverse magnetic field pulses. Stopping the field pulse after a 180 degree precession rotation leads to magnetization reversal with reversal times as short as 165 ps. This switching mode represents the fundamental ultra fast limit of field induced magnetization reversal.
Cite
@article{arxiv.cond-mat/0207732,
title = {Quasi ballistic magnetization reversal},
author = {H. W. Schumacher and C. Chappert and R. C. Sousa and P. P. Freitas and J. Miltat},
journal= {arXiv preprint arXiv:cond-mat/0207732},
year = {2009}
}
Comments
16 pages, 4 figures, experimental. submitted to Phys. Rev. Lett