Related papers: Ellipsometric detection of transitional surface st…
We study the gas-surface dynamics of O2 at Ag(111) with the particular objective to unravel whether electronic non-adiabatic effects are contributing to the experimentally established inertness of the surface with respect to oxygen uptake.…
We analyze the electronic structure of topological surface states in the family of magnetic topological insulators MnBi$_{2n}$Te$_{3n+1}$. We show that, at natural-cleavage surfaces, the Dirac cone warping changes its symmetry from…
Defects of Ge quantum dot arrays may affect the electrophysical, photoelectrical or optical properties of Ge/Si heterostructures as well as the functionality of devices produced on their basis. The defects of Ge quantum dot arrays formed at…
The deformation of an elastic micro-capsule in an infinite shear flow is studied numerically using a spectral method. The shape of the capsule and the hydrodynamic flow field are expanded into smooth basis functions. Analytic expressions…
Understanding the mechanical response and failure of solids is of obvious importance in their use as structural materials. The nature of plastic deformation leading to yielding of amorphous solids has been vigorously pursued in recent…
We analyze the qualitative features in the transition spectra of a model superconductor with multiple energy gaps, using a simple extension of the Mattis-Bardeen expression for probes with case I and case II coherence factors. At…
Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…
We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de…
Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation…
Physically accurate and mathematically tractable models are presented to characterize scattering and reflection properties of reconfigurable intelligent surfaces (RISs). We take continuous and discrete strategies to model a single patch and…
We investigated the thermal evolution of the magnetic properties of MnAs epitaxial films grown on GaAs(001) during the coexistence of hexagonal/orthorhombic phases using polarized resonant (magnetic) soft X-ray scattering and magnetic force…
The Si(001) surface subjected to different treatments in ultrahigh vacuum molecular beam epitaxy chamber for SiO$_2$ film decomposition has been in situ investigated by reflected high energy electron diffraction (RHEED) and high resolution…
Nonlinear nanostructured surfaces provide a paradigm shift in nonlinear optics with new ways to control and manipulate frequency conversion processes at the nanoscale, also offering novel opportunities for applications in photonics,…
Optical metasurfaces have enabled high-speed, low-power image processing within a compact footprint. However, reconfigurable imaging in such flat devices remains a critical challenge for fully harnessing their potential in practical…
The switching and optical properties of phase-change thin films are actively investigated for future smart optical devices. The possibility of having more than one stable state, the large optical contrast between phases, and the fast and…
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N…
The structural, magnetic and resistive properties of (La1-yYy)FeAsO compounds (y = 0.10, 0.20, 0.30) have been investigated by means of X-ray and neutron powder diffraction as well as by resistivity measurements. The temperatures at which…
We present an electrostatic theory of band gap renormalization in atomically-thin semiconductors that captures the strong sensitivity to the surrounding dielectric environment. In particular, our theory aims to correct known band gaps, such…
Microscopic Imaging Ellipsometry is an optical technique that uses an objective and sensing procedure to measure the ellipsometric parameters {\Psi} and {\Delta} in the form of microscopic maps. This technique is well known for being…
Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects…