Related papers: Possibility of a Metallic Field-Effect Transistor
We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits…
We study the nonequilibrium switching phenomenon associated with the metal-insulator transition under electric field E in correlated insulator by a gauge-covariant Keldysh formalism. Due to the feedback effect of the resistive current I,…
The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which…
We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant…
Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation…
Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm…
We derive an effective low-energy theory for metallic (armchair and non-armchair) single-wall nanotubes in the presence of an electric field perpendicular to the nanotube axis, and in the presence of magnetic fields, taking into account…
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As…
The experimental observation of quantum phenomena in mechanical degrees of freedom is difficult, as the systems become linear towards low energies and the quantum limit, and thus reside in the correspondence limit. Here we investigate how…
Here we address a theoretical study on the behaviour of electronic states of heterojunctions and quantum dots based on carbon nanotubes under magnetic fields. Emphasis is put on the analysis of the local density of states, the conductance,…
Tunneling density of states of both the massless and massive (gapped) particles in metallic carbon nanotubes is known to have anomalous energy dependence. This is the result of coupling to multiple low-energy bosonic excitation (plasmons).…
Low-dimensional metallic transport is at the heart of modern high-performance transistors. While the best devices are currently based on III-V heterojunction quantum-well channels, we demonstrate that much greater performance gains reside…
Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a…
The anomalous conducting phase that has been shown to exist in zero field in dilute two-dimensional electron systems in silicon MOSFETs is driven into a strongly insulating state by a magnetic field of about 20 kOe applied parallel to the…
In vanadium dioxide, the interplay between coherent lattice transformation and electronic correlation drives an insulator-to-metal transition (IMT). This phase commutation can be triggered by temperature, pressure, doping or deposition of…
Dielectric screening plays a vital role for the physical properties in the nanoscale and also alters our ability to detect and characterize nanomaterials by optical techniques. We study the dielectric screening inside of carbon nanotubes…
Field Effect Transistors (FETs) are ubiquitous in electronics. As we scale FETs to ever smaller sizes, it becomes natural to ask how small a practical FET might be. We propose and analyze an atomically precise molecular FET (herein referred…
As the dimensions of electronic devices approach those of molecules, the size, geometry and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon…
A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in…
Magnetic moments dilutely dispersed in a metallic host tend to be coupled through the conduction electrons of the metal. This indirect exchange coupling, known to occur for a variety of magnetic materials embedded in several different…