Related papers: Single-electron transistors in electromagnetic env…
We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport…
Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs,…
Charge is transported through superconducting SSS single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an ``odd''…
Both experiments and theoretical studies have demonstrated that the interaction between the current carrying electrons and the induced polarization charge in single-molecule junctions leads to a strong renormalization of molecular charging…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
We study the behavior of a topological Josephson junction in which two topological superconductors are coupled through a quantum dot. We focus on the case with the bulk superconducting gap being the largest energy scale. Two parameter…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
We study a carbon nanotube quantum dot embedded into a SQUID loop in order to investigate the competition of strong electron correlations with proximity effect. Depending whether local pairing or local magnetism prevails, a superconducting…
A current due to a tunneling event that involves three times the charge of an electron was observed in the current - voltage characteristics of a superconducting single-electron tunneling transistor. In this tunnel event, a Cooper pair…
We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain…
Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers…
An electron-phonon cavity consisting of a quantum dot embedded in a free-standing GaAs/AlGaAs membrane is characterized in Coulomb blockade measurements at low temperatures. We find a complete suppression of single electron tunneling around…
Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and…
We investigate coherent transport in Si:MOSFETs with nominal gate lengths 50 to 100nm and various widths at very low temperature. Independent of the geometry, localized states appear when G=e^{2}/h and transport is dominated by resonant…
We report on the observation of Kondo and split Kondo peaks in single-molecule transistors containing a single spin transition molecule with a Fe2+ ion. Coulomb blockade characteristics reveal a double quantum dot behavior in a parallel…
We calculate the spectral density of voltage fluctuations in a Single Electron Transistor (SET), biased to operate in a transport mode where tunneling events are correlated due to Coulomb interaction. The whole spectrum from low frequency…
A detailed investigation of the non-equilibrium steady-state electric and thermoelectric transport properties of a quantum dot coupled to the normal metallic and s-wave superconducting reservoirs (N-QD-S) are provided within the Coulomb…
We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. Within…
A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in…
Interfacing s-wave superconductors and quantum spin Hall edges produces time-reversal-invariant topological superconductivity of a type that can not arise in strictly 1D systems. With the aim of establishing sharp fingerprints of this novel…