Related papers: Weak localization and antilocalization in semicond…
Low-field magnetoresistance is ubiquitous in low-dimensional metallic systems with high resistivity and well understood as arising due to quantum interference on self-intersecting diffusive trajectories. We have found that in graphene this…
We look at the magnetic field induced weak localisation peak of graphene samples with different mobilities. At very low temperatures, low mobility samples exhibit a very broad peak as a function of the magnetic field, in contrast to higher…
Graphene has been predicted to develop a magnetic moment by proximity effect when placed on a ferromagnetic film, a promise that could open exciting possibilities in the fields of spintronics and magnetic data recording. In this work, we…
Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum…
We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mobility via weak localization measurement and Hall-effect…
We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250 mK. By examining signatures of weak localization (WL) and universal conductance fluctuations (UCF), we find a…
This paper considers certain materials, including topological insulators, where spin rotation symmetry is broken much more strongly than time reversal symmetry. When these materials are in the diffusive regime, i.e. when they have disorder…
The results of computer simulation of particle motion over the plane with randomly distributed scatters are presented. They are used to analyse the influence of scattering anisotropy on the negative magnetoresistance due to weak…
A random-matrix theory is presented which shows that breaking time-reversal symmetry by itself does {\em not} suppress the weak-localization correction to the conductance of a disordered metal wire attached to a superconductor. Suppression…
A change in a materials electrical resistance with magnetic field (magnetoresistance) results from quantum interference effects and, or spin-dependent transport, depending on materials properties and dimensionality. In disordered…
We have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of our device is large. The…
Theory of weak localization is developed for two-dimensional holes in the presence of in-plane magnetic field. The Zeeman splitting even in the hole momentum results in the spin-dependent phase changing the quantum interference. The…
We put forward a theory of the weak localization in two dimensional graphene layers which explains experimentally observable transition between positive and negative magnetoresistance. Calculations are performed for the whole range of…
The classical resistance of a contact between a ferromagnet (F) and a superconductor (S) acquires an additional contact term as compared to the contact between a ferromagnet and a normal metal. The necessity to match spin-polarized current…
We provide a comprehensive picture of magnetotransport in graphene monolayers in the limit of non-quantizing magnetic fields. We discuss the effects of two carrier transport, weak localization, weak anti-localization, and strong…
Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves…
We have measured the magnetoresistance of stretched sheets of carbon nanotubes in temperatures ranging from 2 K to 300 K and in magnetic fields up to 9 T, oriented either perpendicular or parallel to the plane of the sheets. The samples…
The wave nature of electrons in low-dimensional structures manifests itself in conventional electrical measurements as a quantum correction to the classical conductance. This correction comes from the interference of scattered electrons…
Manifestations of quantum interference effects in macroscopic objects are rare. Weak localization is one of the few examples of such effects showing up in the electron transport through solid state. Here we show that weak localization…
The experimental studies of the paramagnetic-antiferromagnetic phase transition through M\"{o}ssbauer spectroscopy and measurements of temperature and field dependencies of magnetic susceptibility in the layered Cu$_{0.15}$Fe$_{0.85}$PS$_3$…