Related papers: Valley splitting in strained silicon quantum wells
A combined approach that uses the vibrational self-consistent field (VSCF) and vibrational configuration interaction (VCI) method together with the semiclassical instanton theory was developed to study vibrational tunneling spectra of…
Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom, stemming from the crystal lattice symmetry, is a robust…
An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a…
Strongly nonlinear transport through Diluted Magnetic Semiconductor multiquantum wells occurs due to the interplay between confinement, Coulomb and exchange interaction. Nonlinear effects include the appearance of spin polarized stationary…
We study the spin-valley Kondo effect of a silicon quantum dot occupied by $% \mathcal{N}$ electrons, with $\mathcal{N}$ up to four. We show that the Kondo resonance appears in the $\mathcal{N}=1,2,3$ Coulomb blockade regimes, but not in…
Electrons confined in Si quantum dots possess orbital, spin, and valley degrees of freedom (d.o.f.). We perform Landau-Zener-Stuckelberg-Majorana (LZSM) interferometry on a Si double quantum dot that is strongly coupled to a microwave…
The presence of degenerate conduction band valleys and how they are mixed by interfaces play critical roles in determining electron interaction and spectrum in a silicon nanostructure. Here we investigate how the valley phases affect the…
Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…
Spins confined to atomically-thin semiconductors are being actively explored as quantum information carriers. In transition metal dichalcogenides (TMDCs), the hexagonal crystal lattice gives rise to an additional valley degree of freedom…
In this book article effects related to the vertical transport in weakly coupled multiple quantum wells are reviewed. A self-contained microscopical model for the calculation of the well-to-well currents without any fittings parameters is…
Inspired by the profound physical connotations and potential application prospects of the valleytronics, we design a two-dimensional (2D) WS2/h-VN magnetic van der Waals (vdW) heterostructure and study the control of valley degree of…
The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and…
Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qubits in silicon. Here, we investigate a counterintuitive…
Quantum manipulation of valleys in bilayer graphene is investigated. We establish an effective Schrodinger model, and identify two key mechanisms for valley manipulation - band structure warping and generalized valley-orbit interaction.…
Some semiconductors have more than one degenerate minimum of the conduction band in their band structure. These minima-known as valleys-can be used for storing and processing information, if it is possible to generate a difference in their…
We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from…
We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies…
The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for val-leytronics devices. In silicon MOSFETs, the…
Transition metal dichalcogenides provide a platform for exploring spin-valley physics, offering a promising approach to electric-field-driven spin control for low-power spintronic and quantum devices. Here, we demonstrate…
A large set of recent experiments has been exploring topological transport in bosonic systems, e.g. of photons or phonons. In the vast majority, time-reversal symmetry is preserved, and band structures are engineered by a suitable choice of…