Related papers: On possible spin injection at non-ideal Schottky c…
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…
A scanning tunneling microscope (STM) can probe the inelastic spin excitations of single magnetic atoms in a surface via spin-flip assisted tunneling. A particular and intriguing case is the Mn dimer case. We show here that the existing…
A review is given on the theory of metal-insulator transitions (MIT) in doped semiconductors. We focus in particular on reviewing theories of their anomalous magnetic properties, which emerge from the interplay of spin and charge…
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic…
A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected…
Nonlinear Landau-Zener tunneling is an important nonlinear phenomenon. We propose to stimulate the nonlinear tunneling in a spin-orbit-coupled spinor Bose-Einstein condensate. The system provides an experimentally tunable nonlinearity as…
Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at…
This paper gives a pedagogical introduction to our knowledge of the spin structure of the nucleon. In particular, polarised deep inelastic lepton scattering is presented as a tool to study how the nucleon's constituents combine to generate…
Non-Hermitian systems have been discussed mostly in the context of open systems and nonequilibrium. Recent experimental progress is much from optical, cold-atomic, and classical platforms due to the vast tunability and clear identification…
In this paper one can find a detailed description of the research performed by author during his stay at IMEC (Belgium). It deals with the experimental verification of the highly coherent electron spin transport across ferromagnetic metal /…
Electron transfer processes at molecule-semiconductor interfaces involve a complex mixture of thermionic, tunneling and hopping events. Traditionally these processes have been modeled in a piece-meal fashion, relying on phenomenological…
Scattering of electrons by localized spins is the ultimate process enabling electrical detection and control of the magnetic state of a spin-doped material. At the molecular scale, this scattering is mediated by the electronic orbitals…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
Magnetic skyrmions are localized, topologically protected spin-structures that have been proposed for storing or processing information due to their intriguing dynamical and transport properties. Important in terms of applications is the…
The spin phenomena observed at a clean metall-insulator interface are typically reduced to Rashba-Edelstein effect, that leads to spin accumulation over a few monolayers. We demonstrate that the presence of interface disorder significantly…
We propose an experimentally feasible scheme for topological interface engineering and show how it can be used for studies of dynamics of topologically nontrivial interfaces and perforation of defects and textures across such interfaces.…
We study the spin dependent tunneling of electrons through a zinc-blende semiconductor with the indirect X (or D) minimum serving as the tunneling barrier. The basic difference between tunneling through the G vs. the X barrier is the…
Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited…
We consider a heterostructure consisting of a normal metal and a superconductor separated by a spin-active interface. At finite-bias voltages, spin-filtering and spin-mixing effects at the interface allow for an induced magnetization (spin…