Related papers: On possible spin injection at non-ideal Schottky c…
A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin…
The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors…
We formulate a model of a semiconductor Quantum Dot laser with injection of spin-polarized electrons. As compared to higher-dimensionality structures, the Quantum-Dot-based active region is known to improve laser properties, including the…
We investigate theoretically spin-resolved transport, spin filtering, and nonreciprocal effects in an Altermagnet/Ising superconductor (AM/ISC) junction with a spin-active interface. Using a modified Bogoliubov-de Gennes framework within…
We study theoretically helical edge states of 2D and 3D topological insulators (TI) tunnel-coupled to metal leads and show that their transport properties are strongly affected by contacts as the latter play a role of a heat bath and induce…
Diodes are key elements for electronics, optics, and detection. The search for a material combination providing the best performances for the required application is continuously ongoing. Here, we present a superconducting spintronic tunnel…
We present a comprehensive study of the electronic structure of the layered semiconductor InSe using density functional theory. We calculate the band structure of the monolayer and bulk material with the band gap corrected using hybrid…
High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping…
We propose a spin-dependent resonant tunneling structure to efficiently inject spin-polarized current into silicon (Si). By means of a heavily doped polycrystalline Si (Poly-Si) between the ferromagnetic metal (FM) and Si to reduce the…
We report on nonlocal transport in superconductor hybrid structures, with ferromagnetic as well as normal-metal tunnel junctions attached to the superconductor. In the presence of a strong Zeeman splitting of the density of states, both…
We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the…
We theoretically study the coupling of electric charge and spin polarization in an equilibrium and nonequilibrium electric transport across a two dimensional Josephson configuration comprised of disordered surface channels of a three…
We show that pure spin injection from a magnetic electrode into an inversion symmetry-broken system composed of a tunnel barrier and a metallic region generates a transverse charge current. Such a tunnelling spin galvanic conversion is…
Quasiparticle interference patterns measured by scanning tunneling microscopy (STM) can be used to study the local electronic structure of metal surfaces and high temperature superconductors. Here, we show that even in non-magnetic systems…
The storage ring equipped with an electron cooler is an ideal platform for dielectronic recombination (DR) experiments. In order to fulfil the requirement of DR measurements at the main Cooler Storage Ring, a detuning system for the…
Confined samples of liquid crystals are characterized by a variety of topological defects and can be exposed to external constraints such as extreme confinements with nontrivial topology. Here we explore the intrinsic structure of smectic…
The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies…
Ultrashort spin current pulses have a great potential of becoming the carriers of information in future ultrafast spintronics. They present the outstanding property of an extremely compressed time profile, which can allow for the building…
We develop a general out-of-equilibrium framework for a typical three-terminal setup of common use: an injector, which can be interacting, coupled by both extended tunneling and Coulomb interactions to an inhomogeneous wire with any range…
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…