Related papers: High temperature gate control of quantum well spin…
The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability,…
We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (100) surface. The coherence and phase sensitivity…
We investigate the spin dynamics of high-mobility two-dimensional electrons in GaAs/AlGaAs quantum wells grown along the $[001]$ and $[110]$ directions by time-resolved Faraday rotation at low temperatures. In measurements on the…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
We review some of the newest findings on the spin dynamics of carriers and excitons in GaAs/GaAlAs quantum wells. In intrinsic wells, where the optical properties are dominated by excitonic effects, we show that exciton-exciton interaction…
New low frequency ac susceptibility measurements on two different spin glasses show that cooling/heating the sample at a constant rate yields an essentially reversible (but rate dependent) X(T) curve; a downward relaxation of X occurs…
We study the evolution of the quantum scattering time by gate voltage training in the topological insulator based on InAs/GaSb/InAs trilayer quantum wells. Depending on the minimal gate voltage applied during a gate voltage sweep cycle, the…
We show that an electric field parallel to the wavefronts of an electron-hole grating in a GaAs quantum well generates, via the electronic spin Hall effect, a spin grating of the same wave vector and with an amplitude that can exceed 1% of…
We develop a method of non-perturbative optical control over adiabatic remagnetisation of the nuclear spin system and apply it to verify the spin temperature concept in GaAs microcavities. The nuclear spin system is shown to exactly follow…
Optical pump-probe measurements of spin-dynamics at temperatures down to 1.5K are described for a series of (001)-oriented GaAs/AlGaAs quantum well samples containing high mobility two-dimensional electron gases (2DEGs). For well widths…
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…
Our magnetotransport measurements of quantum Hall stripes in a high-quality GaAs quantum well in a slightly tilted magnetic field reveal that the orientation of stripes can be changed by temperature. Field-cooling and field-warming…
We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by…
We report conductance measurements of a ballistic one-dimensional (1D) wire defined in the lower two-dimensional electron gas of a GaAs/AlGaAs double quantum well. At low temperatures there is an additional structure at $0.7(2e^2/h)$ in the…
Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures…
The presence of non-degenerate valley states in silicon can drastically affect electron dynamics in silicon-based heterostructures, leading to electron spin relaxation and spin-valley coupling. In the context of solid-state spin qubits, it…
The memory effect in a single crystal spin glass ($\mathrm{Cu}_{0.92}\mathrm{Mn}_{0.08}$) has been measured using \freq ac susceptibility techniques over a temperature range of $0.4 - 0.7 \, T_g$ and a model of the memory effect has been…
We analyze spin splitting of the two-dimensional hole spectrum in strained asymmetric SiGe quantum wells (QWs). Based on the Luttinger Hamiltonian, we obtain expressions for the spin-splitting parameters up to the third order in the…
Experiments on a constant-density two-dimensional hole system in a GaAs quantum well reveal that the metallic behavior observed in the zero-magnetic-field temperature dependence of the resistivity depends on the symmetry of the confinement…
Phonon-induced spin relaxation rates in quantum dots are studied as function of in-plane and perpendicular magnetic fields, temperature and electric field, for different dot sizes. We consider Rashba and Dresselhaus spin-orbit mixing in…