Related papers: High temperature gate control of quantum well spin…
We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr…
We present net gain measurements at room temperature in Al$_{0.07}$Ga$_{0.93}$N/GaN 10-period multi-quantum well emitting at 367 nm, using the variable stripe length method. Measurements were conducted at two different positions on the…
We consider stationary spin current in a (110)-oriented GaAs-based symmetric quantum well due to a nonlinear response to an external periodic electric field. The model assumed includes the Dresselhaus spin-orbit interaction and the random…
We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We…
Hole spin dephasing time due to the D'yakonov-Perel' mechanism in $p$-type GaAs (100) quantum wells with well separated light-hole and heavy-hole bands is studied by constructing and numerically solving the kinetic spin Bloch equations. We…
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting…
The quantum spin Hall effect has been predicted theoretically and observed experimentally in InAs/GaSb quantum wells as a result of inverted band structures, for which electron bands in InAs layers are below heavy hole bands in GaSb layers…
Spin susceptibility of stabilized \delta phase in the Pu-Ga alloy is studied by measuring {69,71}^Ga NMR spectra and nuclear spin-lattice relaxation rate {69}T_{1}^{-1} in the temperature range 5 - 350 K. The shift ({69}^K) of the…
We present spin relaxation times of 2D holes obtained by means of spin sensitive bleaching of the absorption of infrared radiation in p-type GaAs/AlGaAs quantum wells (QWs). It is shown that the saturation of inter-subband absorption of…
Confinement asymmetry effects on the photoabsorption of a quantum well are discussed by means of a sum-rules approach using a Hamiltonian including a Rashba spin-orbt coupling. We show that while the strength of the excitation is zero when…
Spin relaxation can be greatly enhanced in narrow channels of two-dimensional electron gas due to ballistic spin resonance, which is mediated by spin-orbit interaction for trajectories that bounce rapidly between channel walls. The channel…
This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical…
A fully microscopic theory of electron spin relaxation by the D'yakonov-Perel' type spin-orbit coupling is developed for a semiconductor quantum well with a magnetic field applied in the growth direction of the well. We derive the Bloch…
The significance of nuclear spin polarisation in time-resolved optical studies of III-V semiconductors is addressed. Electron Larmor beats in pump-probe reflectivity from a GaAs/AlGaAs quantum well show Overhauser shift of 0.7 T due to…
The peak of the spin glass relaxation rate, S(t)=d{-M_{TRM}(t,t_w)}/H/{d ln t}, is directly related to the typical value of the free energy barrier which can be explored over experimental time scales. A change in magnetic field H generates…
We observe the inverse spin Hall effect in a two-dimensional electron gas confined in AlGaAs/InGaAs quantum wells. Specifically, we find that an inhomogeneous spin density induced by the optical injection gives rise an electric current…
We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the…
We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70-100 nm wide lateral Ge2Sb2Te5 (GST) line cells. The cells were amorphized using 1.5-2.5 V…
From spin resonance of two-dimensional (2D) conduction electrons in a modulation doped SiGe/Si/SiGe quantum well structure we find a 2D anisotropy of both the line broadening (dephasing time) and the g-factor. We show that these can be…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…