Related papers: Spin-sensitive Bleaching and Spin-Relaxation in QW…
We investigate Perfect Absorption (PA) of radiation, in which incoming energy is entirely dissipated, in a system consisting of molecular spin centers coherently coupled to a planar microwave resonator operated at milliKelvin temperature…
We report on study of magnetic impurities spin relaxation in diluted magnetic semiconductors above Curie temperature. Systems with a high concentration of magnetic impurities where magnetic correlations take place were studied. The…
This paper presents a study of electron spin dynamics in bulk GaAs at low temperatures for elevated optical excitation conditions. Our time-resolved Faraday rotation measurements yield sub-nanosecond electron spin dephasing-times over a…
We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using…
We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are…
We examine properties of thermal radiation emitted by strongly magnetized neutron stars (NSs). In particular, we show that the pulsation amplitudes of the energy-integrated flux are an increasing function of the absorption column density to…
We describe measurements of spin-polarized tunnelling via discrete energy levels of single Aluminum grains. In high resistance samples ($\sim G\Omega$), the spin-polarized tunnelling current rapidly saturates as a function of the bias…
We investigate the spin-current absorption induced by an inhomogeneous spin-orbit coupling due to impurities in metals. We consider the system with spin currents driven by the electric field or the spin accumulation. The resulting diffusive…
We study the electron spin dynamics in p-type GaAs doped with magnetic Mn acceptors by means of time-resolved pump-probe and photoluminescence techniques. Measurements in transverse magnetic fields show a long spin relaxation time of 20 ns…
The optical injection of charge and spin currents are investigated in Ge$_{1-x}$Sn$_{x}$ semiconductors as a function of Sn content. These emerging silicon-compatible materials enable the modulation of these processes across the entire…
Electron capture times in a separate confinement quantum well (QW) structure with finite electron density are calculated for electron-electron (e-e) and electron-polar optic phonon (e-pop) scattering. We find that the capture time…
We investigate the dynamic polarization of nuclear spins in a nominally undoped GaAs/Al$_{0.35}$Ga$_{0.65}$As quantum well using two complementary experimental approaches: time-resolved Kerr rotation and optical orientation measurements of…
We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T1 times agree very well with NMR data available for T > 1 K. However, the…
Based on new radiative transfer numerical evaluations, we reconsider an argument presented by Schack in 1972 that says that saturation of the absorption of infrared radiation by carbon dioxide in the atmosphere sets in as soon as the…
Recent experiments on the spin-spin relaxation time in high-Tc cuprate superconductors are discussed on the basis of the BCS-RPA theory.
We report calculations of spin relaxation dynamics of two-dimensional electron gas with spin-orbit interaction at the edge region. It is found that the relaxation of spin polarization near the edge is more slow than relaxation in the bulk.…
The temperature-dependent electron spin relaxation of positively charged excitons in a single InAs quantum dot (QD) was measured by time-resolved photoluminescence spectroscopy at zero applied magnetic fields. The experimental results show…
We analyze 1050 ks of INTEGRAL data of the high mass X-ray binary pulsar 1E 1145.1-6141 to study its properties over a long time baseline, from June 2003 to June 2004, with wide spectral coverage. We study three high luminosity episodes,…
We analyze spin splitting of the two-dimensional hole spectrum in strained asymmetric SiGe quantum wells (QWs). Based on the Luttinger Hamiltonian, we obtain expressions for the spin-splitting parameters up to the third order in the…
Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission…