Related papers: Interface-Induced Electron Spin Splitting in SiGe …
Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…
We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) semiconductor monolayers such as MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$ due to the combination of spin-orbit coupling and lack of inversion…
A spin-polarizing electron beam splitter is described which relies on an arrangement of linearly polarized laser waves of nonrelativistic intensity. An incident electron beam is first coherently scattered off a bichromatic laser field,…
Inhomogeneous electronic states resulting from entangled spin, charge, and lattice degrees of freedom are hallmarks of strongly correlated electron materials; such behavior has been observed in many classes of d-electron materials,…
Strong interest has arisen recently on low-dimensional systems with strong spin-orbit interaction due to their peculiar properties of interest for some spintronic applications. Here, the time evolution of the electron spin polarization of a…
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…
The spin splitting driven by spin-orbit coupling in monolayer (ML) transition metal dichalcogenides (TMDCs) family has been widely studied only for the 1H-phase structure, while it is not profound for the 1T-phase structure due to the…
Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic…
Spin-conserving and spin-flip opaque reflections of electrons from a potential barrier in heterostructures are described. An electric field of the barrier is considered to be the only source of energy spin splitting in the presence of…
A fully microscopic theory of electron spin relaxation by the D'yakonov-Perel' type spin-orbit coupling is developed for a semiconductor quantum well with a magnetic field applied in the growth direction of the well. We derive the Bloch…
Compared with direct-gap semiconductors, the valley degeneracy of silicon and germanium opens up new channels for spin relaxation that counteract the spin degeneracy of the inversion-symmetric system. Here the symmetries of the…
Scalable spin qubit devices will likely require long-range qubit interconnects. We propose to create such an interconnect with a resistive topgate. The topgate is positively biased, to form a channel between the two dots; an end-to-end…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
We review recent studies on spin decoherence of electrons and holes in quasi-two-dimensional quantum dots, as well as electron-spin relaxation in nanowire quantum dots. The spins of confined electrons and holes are considered major…
In magnetic pyrochlore materials, the interplay of spin-orbit coupling, electronic correlations, and geometrical frustration gives rise to exotic quantum phases, including topological semimetals and spin ice. While these phases have been…
Kondo lattices are one of the classic models of strongly correlated systems where despite a long history, a full understanding of the excitation spectra is still not available. Here we propose that recent progress in engineering…
The longitudinal spin relaxation time, T1, in a Si/SiGe quantum well is determined from the saturation of the ESR signal. We find values of a few microseconds. Investigations of T1 as a function of Fermi energy, concentration of scattering…
The stressed heterojunctions with antiferromagnetic ordering in which the constituents have oppposite band edge symmetry and their gaps have opposite signs have been investigated. The interface states have been shown to appear in these…
We study the spin-dependent transmission through interfaces between a HgTe/CdTe quantum well (QW) and a metal - both for the normal metal and the superconducting case. Interestingly, we discover a new type of spin Hall effect at these…
While electron spins in silicon heterostructures make attractive qubits, little is known about the coherence of electrons at the Si/SiO2 interface. We report spin relaxation (T1) and coherence (T2) times for mobile electrons and natural…