Related papers: Interface-Induced Electron Spin Splitting in SiGe …
There is steadily increasing evidence that the two-dimensional electron gas (2DEG) formed at the interface of some insulating oxides like LaAlO3/SrTiO3 and LaTiO3/SrTiO3 is strongly inhomogeneous. The inhomogeneous distribution of electron…
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that…
Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering…
We present results from a theoretical and experimental study of spin-splitting in small open lateral quantum dots (i.e. in the regime when the dot is connected to the reservoirs via leads that support one or more propagating modes). We…
The spin-orbit interaction in semiconductors is shown to result in an anisotropic contribution into the exchange Hamiltonian of a pair of localized conduction-band electrons. The anisotropic exchange interaction exists in semiconductor…
Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical…
We present a theoretical analysis of the electron spin decoherence in single Nitrogen-Vacancy defects in ultra-pure diamond. The electron spin decoherence is due to the interactions with Carbon-13 nuclear spins in the diamond lattice. Our…
We have studied the spin-splitting effect in a four-terminal two-dimensional (2D) electron gas system with two potential barriers generated by two surface metal gates and an external perpendicular magnetic field. The calculations show that…
In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with…
The failure of spatial inversion symmetry in noncentrosymmetric materials introduces two different types of spin-independent and spin-dependent electron hopping. The spin-dependent term can be translated into a quasi-spin-orbit coupling and…
Spin transport properties of a spin-polarized two-dimensional electron gas are studied in the presence of electron-electron interactions. Longitudinal and transverse spin diffusion coefficients are calculated with the quantum transport…
We consider spin-orbit coupling effects in Na$_4$Ir$_3$O$_8$, a material in which Ir$^{4+}$ spins form an hyper-kagom\'{e} lattice, a three-dimensional network of corner-sharing triangles. We argue that both low temperature thermodynamic…
Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen vacancy centers in diamond, an alternative strategy seeks to identify new spin…
While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface results in significantly larger SOC. This is a concern for…
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…
The electronic state around a single vacancy in silicon crystal is investigated by using the Green's function approach. The triply degenerate charge states are found to be widely extended and account for extremely large elastic softening at…
Spin relaxation of conduction electrons in metals is significantly influenced by the Fermi surface topology. Electrons near Brillouin zone boundaries, special symmetry points, or accidental degeneracy lines have spin flip rates much higher…
Selected problems of fundamental importance for spintronics and spin-polarized transport are reviewed, some of them with a special emphasis on their applications in quantum computing and coherent control of quantum dynamics. The role of the…
A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…
Understanding depairing effects in a hybrid-superconducting interface utilizing high spin-orbit materials such as topological insulators or 1D semiconducting nanowires is becoming an important research topic in the study of…