Related papers: High-Temperature Hall Effect in Ga(1-x)Mn(x)As
Heavily-alloyed, 100 nm Ga1-xMnxAs (x>0.1) films are obtained via low temperature molecular beam epitaxy utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible, optimized…
Here, we present the measurements of $R_H$ in a series of $Ti_xSi_{100-x}$ amorphous reaching the critical concentration, $x_c\approx9-9.5$. For $x\geq17$, the Hall coefficient displays the behavior predicted by the perturbation theory,…
The anomalous Hall effect in a multiband tight-binding model is numerically studied taking into account both elastic scattering by disorder and inelastic scattering by the electron-phonon interaction. The Hall conductivity is obtained as a…
We systematically investigate the influence of high pressure on the electronic transport properties of layered ferromagnetic materials, in particular, those of Fe$_3$GeTe$_2$. Its crystal sustains a hexagonal phase under high pressures up…
Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the…
Antiferromagnetic spin motion at terahertz (THz) frequencies attracts growing interests for fast spintronics, however their smaller responses to external field inhibit device application. Recently the noncollinear antiferromagnet Mn$_3$Sn,…
Transport properties of the good thermoelectric misfit oxide Ca$_3$Co$_4$O$_9$ are examined. In-plane resistivity and Hall resistance measurements were made on epitaxial thin films which were grown on {\it c}-cut sapphire substrates using…
We report here the observation of robust thermoremanent magnetization (TRM) in Fe-intercalated TaS$_2$ single crystal Fe$_{x}$TaS$_2$, which develops upon cooling under a moderate magnetic field of 500 Oe or higher. The thermoremanence is…
We report on the anomalous Hall coefficient and longitudinal resistivity scaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055). As-grown samples exhibit scaling parameter n of ~ 1. Near the optimal annealing…
We report the anomalous Hall effect (AHE) and the anomalous Nernst effect (ANE) data for the non-collinear Weyl semimetal CeAlSi. The anomalous Hall conductivity ({\sigma}_ij^A) was measured for two different orientations of the magnetic…
The resistivity and Hall effect in CeNiSn are measured at temperatures down to 35 mK and in magnetic fields up to 20 T with the current applied along the {\it b} axis. The resistivity at zero field exhibits quadratic temperature dependence…
The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn$_5$Ge$_3$. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect, and calculated…
The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films…
A detailed study of charge transport in the paramagnetic phase of Ho0.8Lu0.2B12 strongly correlated antiferromagnet was carried out at temperatures 1.9-300 K in magnetic fields up to 80 kOe. Four mono-domain single crystals with different…
Fe$_4$GeTe$_2$, an itinerant vdW ferromagnet (FM) having Curie temperature (T$_C$) close to room temperature ($\sim 270$ K), exhibits another transition (T$_{SR}$ $\sim$ 120 K) where the easy axis of magnetization changes from in-plane to…
In this paper, we study the thermodynamic properties of the noncommutative quantum Hall effect (NCQHE) with anomalous magnetic moment (AMM) for both relativistic and nonrelativistic cases in the high temperatures regime. Thus, we use the…
As one of the most fundamental physical phenomena, the anomalous Hall effect (AHE) typically occurs in ferromagnetic materials but is not expected in the conventional superconductors. Here, we have observed a giant AHE in kagome…
The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576{\deg}C. Both devices showed decreasing voltage-scaled magnetic sensitivity at high temperature,…
The material class of kagome metals has rapidly grown and has been established as a field to explore the interplay between electronic topology and magnetism. In this work, we report a combined theoretical and experimental study of the…
We show that suitably-designed magnetic semiconductor heterostructures consisting of Mn delta-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of magnetic moments of Mn atoms are controllably overlapped with the…