Related papers: High-Temperature Hall Effect in Ga(1-x)Mn(x)As
Topologically nontrivial electronic states can give rise to novel anomalous Hall effects. The potential appearance of these effects at room temperature holds promise for their application in magnetic sensing, spintronics, and energy…
The Hall effect, ever intriguing since its discovery, has spurred the exploration of its phenomena, intensified by advances in topology and novel materials. Differentiating the ordinary Hall effect from extraordinary properties like the…
Recently, this long-sought quantum anomalous Hall effect was realized in the magnetic topological insulator. However, the requirement of an extremely low temperature (approximately 30 mK) hinders realistic applications. Based on…
A detailed study of the magnetic and transport properties of Si1-xMnx (X = 0.35) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data…
At sufficiently low temperatures, many quantum effects, such as weak localization, electron-electron interaction (EEI), and Kondo screening, can lead to pronounced corrections to the semiclassical electron transport. Although low…
In-plane resistivity, magnetoresistance and Hall effect measurements have been conducted on quenched K$_x$Fe$_{2-y}$Se$_2$ single crystals in order to analysis the normal-state transport properties. It is found that the Kohler's rule is…
To realize the quantum anomalous Hall effect (QAHE) at elevated temperatures, the approach of magnetic proximity effect (MPE) was adopted to break the time-reversal symmetry in the topological insulator (Bi0.3Sb0.7)2Te3 (BST) based…
Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga(1-x)Mn(x)As epitaxial layers (0.015<x<0.06). Thermoelectric power analysis gives the information about…
We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high…
Anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) in a variety of ferromagnetic metals including pure metals, oxides, and chalcogenides, are studied to obtain unified understandings of their origins. We show a universal scaling…
Anomalous Hall effect (AHE) is important for understanding the topological properties of electronic states, and provides insight into the spin-polarized carriers of magnetic materials. AHE has been extensively studied in metallic, but not…
The Hall effect is investigated for eight superconducting Fe(Se_0.5_Te_0.5_) thin films grown on MgO and LaSrAlO_4_ substrates with different transition temperatures (T_c_). The normal Hall coefficients (R_H_) have positive values with…
The temperature and magnetic field dependences of the conductivity of the heterostructures with asymmetric In$_x$Ga$_{1-x}$As quantum well are studied. It is shown that the metallic-like temperature dependence of the conductivity observed…
Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was seen in…
The anomalous Hall effect (AHE) in the Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality…
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of…
The origin of the Hall effect in many itinerant ferromagnets is still not resolved, with an anomalous contribution from the sample magnetization that can exhibit extrinsic or intrinsic behavior. We report the first mid-infared (MIR)…
Hall effect was studied on the single crystals of antiferromagnets PrB$_6$ and NdB$_6$ at temperatures 2K$<$T$<300$K in magnetic fields up to 8T using the sample rotation technique. At low magnetic fields $\mu_0$H$\leq1$T Hall coefficient…
The anomalous Hall effect (AHE), a Hall signal occurring without an external magnetic field, is one of the most significant phenomena. However, understanding the AHE mechanism has been challenging and largely restricted to ferromagnetic…
The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TI) exhibits many fascinating physical properties for potential applications in nano-electronics and spintronics. However,…