Related papers: High-Temperature Hall Effect in Ga(1-x)Mn(x)As
The anomalous Hall coefficient Rs has been studied for the reentrant spin glass system Fe0.7Al0.3 by measuring the magnetization M and the Hall resistivity r_H. We have found that R_s exhibits anomalous temperature dependence at the…
When exploring new magnetic materials, the effect of alloying plays a crucial role for numerous properties. By altering the alloy composition, it is possible to tailor, e.g., the Curie temperature ($T_\text{C}$). In this work, $T_\text{C}$…
Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick…
Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature magnetic charging of domain walls is observed and nucleation…
We report a rare realization of unconventional anomalous Hall effect (UAHE) both below and above the magnetic transition temperature (T_C) in a hexagonal noncentrosymmetric magnet Y_3Co_8Sn_4, using a combined experimental and ab-initio…
The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic…
We present results of experimental studies of structural, magneto-transport and magnetic properties of CoFe-B-Al-O films deposited onto a glass ceramic substrate by the ion-beam sputtering of the target composed of Co40Fe40B20 and Al2O3…
Recent studies have shown that certain antiferromagnetic (AFM) materials with the same symmetry breaking as ferromagnets can generate sufficiently large ferromagnetic (FM) responses. Here, we report that the new AFM material NbMnAs exhibits…
SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t_Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with…
The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics.…
We consider the Anomalous Hall Effect (AHE) in thin disordered ferromagnetic films. Using a microscopic model of electrons in a random potential of identical impurities including spin-orbit coupling, we develop a general formulation for…
We report on the pressure evolution of the giant anomalous Hall effect (AHE) in the chiral antiferromagnet Mn$_3$Ge. The AHE originating from the non-vanishing Berry curvature in Mn$_3$Ge can be continuously tuned by application of…
Breaking the time-reversal symmetry of a topological insulator (TI) by ferromagnetism can induce exotic magnetoelectric phenomena such as quantized anomalous Hall (QAH) effect. Experimental observation of QAH effect in a magnetically doped…
The off-diagonal (electric, thermal and thermoelectric) transport coefficients of a solid can acquire an anomalous component due to the non-trivial topology of the Bloch waves. We present a study of the anomalous Hall (AHE), Nernst (ANE)…
The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of…
We investigate the temperature dependence of the intrinsic anomalous Hall conductivity in Fe$_3$Ge, which is a ferromagnetic topological metal. We observe a significant anisotropy in the anomalous Hall conductivity between in-plane and…
Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119 are presented. The observed negative magnetoresistance we…
The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of robust intrinsic…
The effect of short-time and long-time annealing at 250C on the conductivity, hole density, and Curie temperature of GaMnAs single layers and GaMnAs/InGaMnAs heterostructures is studied by in-situ conductivity measurements as well as Raman…
It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concentration is sufficiently low. In such films, the easy axis…